WSD80120DN56 Datasheet and Replacement
Type Designator: WSD80120DN56
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 104 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 395 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0048 Ohm
Package: DFN5X6-8
WSD80120DN56 substitution
WSD80120DN56 Datasheet (PDF)
wsd80120dn56.pdf

WSD80120DN56 N-Ch MOSFETGeneral Description Product SummeryThe WSD80120DN56 is the highest ID BVDSS RDSON performance trench N-Ch MOSFET with extreme high cell density , which provide 85V 3.7m 120Aexcellent RDSON and gate charge for most of the synchronous buck converter applications . Applications The WSD80120DN56 meet the RoHS and Green Product requirement,100% EA
wsd80100dn56.pdf

WSD80100DN56 N-Ch MOSFETGeneral Description Product SummeryThe WSD80100DN56 is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate 80V 100A6.1mcharge for most of the synchronous buck converter applications . Applications The WSD80100DN56 meet the RoHS and Green DC-DC converter switching fo
Datasheet: WSD45P10DN56 , WSD50P10ADN56 , WSD50P10DN56 , WSD6040DN56 , WSD6056DN56 , WSD60N10GDN56 , WSD75100DN56 , WSD80100DN56 , IRFP260N , WSD90P06DN56 , WSE3088 , WSE3099 , WSE9968 , WSE9968A , WSF07N10 , WSF07N20 , WSF09N20 .
History: MTB06N03H8
Keywords - WSD80120DN56 MOSFET datasheet
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History: MTB06N03H8



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