All MOSFET. WSF09N20 Datasheet

 

WSF09N20 Datasheet and Replacement


   Type Designator: WSF09N20
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10.7 nS
   Cossⓘ - Output Capacitance: 51.2 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
   Package: TO252
 

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WSF09N20 Datasheet (PDF)

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WSF09N20

WSF09N20 N-Ch MOSFETGeneral Description Product SummeryThe WSF09N20 is the highest performance trench BVDSS RDSON ID N-Ch MOSFET with extreme high cell density,which provide excellent RDSON and gate charge for most 200V 0.21 9Aof the synchronous buck converter applications . Applications The WSF09N20 meet the RoHS and Green Product requirement , 100% EAS guaranteed with

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WSF09N20

WSF09N20G N-Ch MOSFETGeneral Description Product SummeryThe WSF09N20G is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density,which provide excellent RDSON and gate 200V 0.21 9Acharge for most of the synchronous buck converter applications . Applications The WSF09N20G meet the RoHS and Green Product requirement , 100% EAS guaranteed

Datasheet: WSD80120DN56 , WSD90P06DN56 , WSE3088 , WSE3099 , WSE9968 , WSE9968A , WSF07N10 , WSF07N20 , IRFB4110 , WSF09N20G , WSF10N40 , WSF12N10 , WSF15N10 , WSF15N10A , WSF15N10G , WSF15P10 , WSF18N15 .

History: SSD40P04-20D | SI5853DDC

Keywords - WSF09N20 MOSFET datasheet

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