WSF09N20G MOSFET Datasheet: N-Ch, 200V, 9A. Full specification with pinout and replacement list

WSF09N20G Specs and Replacement

Type Designator: WSF09N20G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 83 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10.7 nS

Cossⓘ - Output Capacitance: 51.2 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm

Package: TO252

WSF09N20G substitution

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WSF09N20G datasheet

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WSF09N20G N-Ch MOSFET General Description Product Summery The WSF09N20G is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density,which provide excellent RDSON and gate 200V 0.21 9A charge for most of the synchronous buck converter applications . Applications The WSF09N20G meet the RoHS and Green Product requirement , 100% EAS guaranteed... See More ⇒

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WSF09N20 N-Ch MOSFET General Description Product Summery The WSF09N20 is the highest performance trench BVDSS RDSON ID N-Ch MOSFET with extreme high cell density,which provide excellent RDSON and gate charge for most 200V 0.21 9A of the synchronous buck converter applications . Applications The WSF09N20 meet the RoHS and Green Product requirement , 100% EAS guaranteed with... See More ⇒

Detailed specifications: WSD90P06DN56, WSE3088, WSE3099, WSE9968, WSE9968A, WSF07N10, WSF07N20, WSF09N20, IRFB4115, WSF10N40, WSF12N10, WSF15N10, WSF15N10A, WSF15N10G, WSF15P10, WSF18N15, WSF20N06