All MOSFET. WSF10N40 Datasheet

 

WSF10N40 Datasheet and Replacement


   Type Designator: WSF10N40
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 56 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20.1 nS
   Cossⓘ - Output Capacitance: 83 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.607 Ohm
   Package: TO252
 

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WSF10N40 Datasheet (PDF)

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WSF10N40

WSF10N40 N-Ch MOSFETGeneral Description Product SummeryThe WSF10N40 is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and 400V 515m 10Agate charge for most of the synchronous buck converter applications . Applications DC-DC & DC-AC Converters for telecom,industrial and consumer environment

Datasheet: WSE3088 , WSE3099 , WSE9968 , WSE9968A , WSF07N10 , WSF07N20 , WSF09N20 , WSF09N20G , 2N7000 , WSF12N10 , WSF15N10 , WSF15N10A , WSF15N10G , WSF15P10 , WSF18N15 , WSF20N06 , WSF20N20 .

History: MTA090P02J3 | F24W60C3 | HM120N03K | SVT035R5NT | F31W60CP | SVT042R5NT | JMTV250P02A

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