WSF10N40 Specs and Replacement
Type Designator: WSF10N40
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 56 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 20.1 nS
Cossⓘ - Output Capacitance: 83 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.607 Ohm
Package: TO252
WSF10N40 substitution
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WSF10N40 datasheet
wsf10n40.pdf
WSF10N40 N-Ch MOSFET General Description Product Summery The WSF10N40 is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and 400V 515m 10A gate charge for most of the synchronous buck converter applications . Applications DC-DC & DC-AC Converters for telecom, industrial and consumer environment ... See More ⇒
Detailed specifications: WSE3088, WSE3099, WSE9968, WSE9968A, WSF07N10, WSF07N20, WSF09N20, WSF09N20G, 2N7000, WSF12N10, WSF15N10, WSF15N10A, WSF15N10G, WSF15P10, WSF18N15, WSF20N06, WSF20N20
Keywords - WSF10N40 MOSFET specs
WSF10N40 cross reference
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WSF10N40 substitution
WSF10N40 replacement
Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: WSD3067DN56 | WMM030N06HG4 | SSI1N50A | SSI2N60A
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