All MOSFET. WSF10N40 Datasheet

 

WSF10N40 MOSFET. Datasheet pdf. Equivalent


   Type Designator: WSF10N40
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 56 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 10 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 25 nC
   trⓘ - Rise Time: 20.1 nS
   Cossⓘ - Output Capacitance: 83 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.607 Ohm
   Package: TO252

 WSF10N40 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WSF10N40 Datasheet (PDF)

 ..1. Size:1934K  winsok
 wsf10n40.pdf

WSF10N40 WSF10N40

WSF10N40 N-Ch MOSFETGeneral Description Product SummeryThe WSF10N40 is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and 400V 515m 10Agate charge for most of the synchronous buck converter applications . Applications DC-DC & DC-AC Converters for telecom,industrial and consumer environment

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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