WSF10N40 Datasheet and Replacement
Type Designator: WSF10N40
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 56 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 20.1 nS
Cossⓘ - Output Capacitance: 83 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.607 Ohm
Package: TO252
WSF10N40 substitution
WSF10N40 Datasheet (PDF)
wsf10n40.pdf

WSF10N40 N-Ch MOSFETGeneral Description Product SummeryThe WSF10N40 is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and 400V 515m 10Agate charge for most of the synchronous buck converter applications . Applications DC-DC & DC-AC Converters for telecom,industrial and consumer environment
Datasheet: WSE3088 , WSE3099 , WSE9968 , WSE9968A , WSF07N10 , WSF07N20 , WSF09N20 , WSF09N20G , IRF9540 , WSF12N10 , WSF15N10 , WSF15N10A , WSF15N10G , WSF15P10 , WSF18N15 , WSF20N06 , WSF20N20 .
History: SFR9024
Keywords - WSF10N40 MOSFET datasheet
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History: SFR9024



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