WSF28N06 MOSFET. Datasheet pdf. Equivalent
Type Designator: WSF28N06
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 60 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 28 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 12 nC
trⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 85 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
Package: TO252
WSF28N06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WSF28N06 Datasheet (PDF)
wsf28n06.pdf
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WSF28N06 N-Ch MOSFETPin Configuration Features 60V/28A,RDS(ON) = 28m (TYP.) @ VGS = 10V RDS(ON )= 38m (TYP.) @ VGS = 5V Reliable and Rugged Lead Free and Green Devices Available(RoHS Compliant)Top View of TO-252-2 100% UIS + R Testedg Applications Switching Application for Actuator. Converter Application in LED TV. Switching Application in Industry.N-Chan
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