All MOSFET. WSF35P06 Datasheet

 

WSF35P06 Datasheet and Replacement


   Type Designator: WSF35P06
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 31.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 13.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20.1 nS
   Cossⓘ - Output Capacitance: 76 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
   Package: TO252
 

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WSF35P06 Datasheet (PDF)

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WSF35P06

WSF35P06P-Ch MOSFETGeneral Description Product SummeryThe WSF35P06 is the highest performance BVDSS RDSON ID trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and -60V 80m -13.5Agate charge for most of the synchronous buck converter applications . Applications The WSF35P06 meet the RoHS and Green Product requirement , 100% EAS guarante

Datasheet: WSF3038 , WSF3040 , WSF3055 , WSF3085 , WSF3085A , WSF3087 , WSF30P06 , WSF3410 , AON7506 , WSF38P10 , WSF4012 , WSF4022 , WSF4042 , WSF4060 , WSF40N06 , WSF40N10 , WSF40N10A .

History: SPP07N65C3 | SSF2302 | AP55T10GH-HF | UK3018G-AL3-R | AFP2311A | RXH100N03 | AON6410

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