All MOSFET. WSF35P06 Datasheet

 

WSF35P06 MOSFET. Datasheet pdf. Equivalent


   Type Designator: WSF35P06
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 31.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 13.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 20.1 nS
   Cossⓘ - Output Capacitance: 76 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
   Package: TO252

 WSF35P06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WSF35P06 Datasheet (PDF)

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 wsf35p06.pdf

WSF35P06 WSF35P06

WSF35P06P-Ch MOSFETGeneral Description Product SummeryThe WSF35P06 is the highest performance BVDSS RDSON ID trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and -60V 80m -13.5Agate charge for most of the synchronous buck converter applications . Applications The WSF35P06 meet the RoHS and Green Product requirement , 100% EAS guarante

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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