All MOSFET. WSF6012 Datasheet

 

WSF6012 Datasheet and Replacement


   Type Designator: WSF6012
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 34.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 14.2 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.037 Ohm
   Package: TO252-4L
 

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WSF6012 Datasheet (PDF)

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WSF6012

WSF6012 N&P-Channel MOSFETGeneral Description Product SummeryThe WSF6012 is the highest performance BVDSS RDSON ID trench N-ch and P-ch MOSFET with extreme high cell density , which provide excellent 60V 28m 20ARDSON and gate charge for most of the -60V 46m -15Asynchronous buck converter applications . The WSF6012 meet the RoHS and Green Applications Product requir

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WSF6012

WSF60100 N-Ch MOSFETGeneral Description Product SummeryThe WSF60100 is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and 60V 6m 98Agate charge for most of the synchronous buck converter applications . Applications The WSF60100 meet the RoHS and Green High Frequency Point-of-Load Synchronous

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WSF6012

WSF60N06 N-Ch MOSFETGeneral Description Product SummeryThe WSF60N06 is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and 60V 10m 60Agate charge for most of the synchronous buck converter applications . Applications The WSF60N06 meet the RoHS and Green High Frequency Point-of-Load Synchronous

Datasheet: WSF40P06 , WSF45P06 , WSF45P10 , WSF50N10 , WSF50N10G , WSF50P04 , WSF50P10 , WSF60100 , 7N60 , WSF60N06 , WSF70N10 , WSF70P03 , WSF80N06H , WSF90P03 , WSG02N20 , WSG02P06 , WSG03N10 .

History: NCE2014ES | NCE2012 | FQA9N90C | WST3414 | STD16NF06L | WSF3040 | WSG02N20

Keywords - WSF6012 MOSFET datasheet

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