WSF6012 MOSFET Datasheet: NP-Ch, 60V, 20A. Full specification with pinout and replacement list

WSF6012 Specs and Replacement

Type Designator: WSF6012

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 34.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14.2 nS

Cossⓘ - Output Capacitance: 70 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.037 Ohm

Package: TO252-4L

WSF6012 substitution

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WSF6012 datasheet

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WSF6012 N&P-Channel MOSFET General Description Product Summery The WSF6012 is the highest performance BVDSS RDSON ID trench N-ch and P-ch MOSFET with extreme high cell density , which provide excellent 60V 28m 20A RDSON and gate charge for most of the -60V 46m -15A synchronous buck converter applications . The WSF6012 meet the RoHS and Green Applications Product requir... See More ⇒

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WSF60100 N-Ch MOSFET General Description Product Summery The WSF60100 is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and 60V 6m 98A gate charge for most of the synchronous buck converter applications . Applications The WSF60100 meet the RoHS and Green High Frequency Point-of-Load Synchronous ... See More ⇒

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wsf60n06.pdf pdf_icon

WSF60N06 N-Ch MOSFET General Description Product Summery The WSF60N06 is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and 60V 10m 60A gate charge for most of the synchronous buck converter applications . Applications The WSF60N06 meet the RoHS and Green High Frequency Point-of-Load Synchronous ... See More ⇒

Detailed specifications: WSF40P06, WSF45P06, WSF45P10, WSF50N10, WSF50N10G, WSF50P04, WSF50P10, WSF60100, AO3407, WSF60N06, WSF70N10, WSF70P03, WSF80N06H, WSF90P03, WSG02N20, WSG02P06, WSG03N10