WSF6012
MOSFET. Datasheet pdf. Equivalent
Type Designator: WSF6012
Type of Transistor: MOSFET
Type of Control Channel: NP
-Channel
Pdⓘ
- Maximum Power Dissipation: 34.7
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 20
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 12.6
nC
trⓘ - Rise Time: 14.2
nS
Cossⓘ -
Output Capacitance: 70
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.037
Ohm
Package:
TO252-4L
WSF6012
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WSF6012
Datasheet (PDF)
..1. Size:1399K winsok
wsf6012.pdf
WSF6012 N&P-Channel MOSFETGeneral Description Product SummeryThe WSF6012 is the highest performance BVDSS RDSON ID trench N-ch and P-ch MOSFET with extreme high cell density , which provide excellent 60V 28m 20ARDSON and gate charge for most of the -60V 46m -15Asynchronous buck converter applications . The WSF6012 meet the RoHS and Green Applications Product requir
8.1. Size:749K winsok
wsf60100.pdf
WSF60100 N-Ch MOSFETGeneral Description Product SummeryThe WSF60100 is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and 60V 6m 98Agate charge for most of the synchronous buck converter applications . Applications The WSF60100 meet the RoHS and Green High Frequency Point-of-Load Synchronous
9.1. Size:536K winsok
wsf60n06.pdf
WSF60N06 N-Ch MOSFETGeneral Description Product SummeryThe WSF60N06 is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and 60V 10m 60Agate charge for most of the synchronous buck converter applications . Applications The WSF60N06 meet the RoHS and Green High Frequency Point-of-Load Synchronous
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