All MOSFET. WSK140N08 Datasheet

 

WSK140N08 Datasheet and Replacement


   Type Designator: WSK140N08
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 140 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 665 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
   Package: TO263
 

 WSK140N08 substitution

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WSK140N08 Datasheet (PDF)

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WSK140N08

WSK140N08 N-Ch MOSFETProduct SummeryGeneral Description The WSK140N08 is the highest performance ID BVDSS RDSON trench N-Ch MOSFET with extreme high 80V 4.8m 140Acell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . Applications Power Management for Inverter Systems.Features TO-263-2L Pin Configura

Datasheet: WSF60N06 , WSF70N10 , WSF70P03 , WSF80N06H , WSF90P03 , WSG02N20 , WSG02P06 , WSG03N10 , AO3401 , WSK180N04 , WSK200N08A , WSK220N04 , WSP05N15 , WSP06N10 , WSP08N10 , WSP10N10 , WSP14N10 .

History: HCFL65R130 | SI4862DY | SI4953ADY | IPD90N10S4L-06 | RFD12N06RLESM | JCS12N65ST | SUB60N06-18

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