WSK140N08 PDF and Equivalents Search

 

WSK140N08 Specs and Replacement

Type Designator: WSK140N08

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 250 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 140 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17 nS

Cossⓘ - Output Capacitance: 665 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm

Package: TO263

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WSK140N08 datasheet

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WSK140N08

WSK140N08 N-Ch MOSFET Product Summery General Description The WSK140N08 is the highest performance ID BVDSS RDSON trench N-Ch MOSFET with extreme high 80V 4.8m 140A cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . Applications Power Management for Inverter Systems. Features TO-263-2L Pin Configura... See More ⇒

Detailed specifications: WSF60N06, WSF70N10, WSF70P03, WSF80N06H, WSF90P03, WSG02N20, WSG02P06, WSG03N10, P60NF06, WSK180N04, WSK200N08A, WSK220N04, WSP05N15, WSP06N10, WSP08N10, WSP10N10, WSP14N10

Keywords - WSK140N08 MOSFET specs

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