WSK140N08 Datasheet and Replacement
Type Designator: WSK140N08
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 250 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 140 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 665 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
Package: TO263
WSK140N08 substitution
WSK140N08 Datasheet (PDF)
wsk140n08.pdf

WSK140N08 N-Ch MOSFETProduct SummeryGeneral Description The WSK140N08 is the highest performance ID BVDSS RDSON trench N-Ch MOSFET with extreme high 80V 4.8m 140Acell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . Applications Power Management for Inverter Systems.Features TO-263-2L Pin Configura
Datasheet: WSF60N06 , WSF70N10 , WSF70P03 , WSF80N06H , WSF90P03 , WSG02N20 , WSG02P06 , WSG03N10 , AO3401 , WSK180N04 , WSK200N08A , WSK220N04 , WSP05N15 , WSP06N10 , WSP08N10 , WSP10N10 , WSP14N10 .
History: SJMN380R65MF | STB80NF55L-06 | WSF80N06H | STP80NF55-06 | SI5853 | SML50B26 | NCEP068N10AG
Keywords - WSK140N08 MOSFET datasheet
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History: SJMN380R65MF | STB80NF55L-06 | WSF80N06H | STP80NF55-06 | SI5853 | SML50B26 | NCEP068N10AG



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