All MOSFET. WSK140N08 Datasheet

 

WSK140N08 MOSFET. Datasheet pdf. Equivalent


   Type Designator: WSK140N08
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 140 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 115 nC
   trⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 665 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
   Package: TO263

 WSK140N08 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WSK140N08 Datasheet (PDF)

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 wsk140n08.pdf

WSK140N08 WSK140N08

WSK140N08 N-Ch MOSFETProduct SummeryGeneral Description The WSK140N08 is the highest performance ID BVDSS RDSON trench N-Ch MOSFET with extreme high 80V 4.8m 140Acell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . Applications Power Management for Inverter Systems.Features TO-263-2L Pin Configura

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