WSP4606
MOSFET. Datasheet pdf. Equivalent
Type Designator: WSP4606
Type of Transistor: MOSFET
Type of Control Channel: NP
-Channel
Pdⓘ
- Maximum Power Dissipation: 2.5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 7
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 7.2
nC
trⓘ - Rise Time: 9.8
nS
Cossⓘ -
Output Capacitance: 68
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.028
Ohm
Package:
SOP8
WSP4606
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WSP4606
Datasheet (PDF)
..1. Size:1338K winsok
wsp4606.pdf 
WSP4606N-Ch and P-Channel MOSFETGeneral Description Product SummeryThe WSP4606 is the highest performance trench BVDSS RDSON ID N-ch and P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and 30V 18m 7Agate charge for most of the synchronous buck converter applications . -6A-30V 30mThe WSP4606 meet the RoHS and Green Applications Produc
0.1. Size:3139K winsok
wsp4606a.pdf
WSP4606AN-Ch and P-Channel MOSFETGeneral Description Product SummeryThe WSP4606A is the highest performance BVDSS RDSON ID trench N-ch and P-ch MOSFETs with extreme high cell density , which provide excellent 30V 22m 6.8ARDSON and gate charge for most of the synchronous buck converter applications . -5.6A-30V 45mThe WSP4606A meet the RoHS and Green Applications
9.1. Size:1005K winsok
wsp4620.pdf
WSP4620N-Ch and P-Channel MOSFETGeneral Description Product SummeryThe WSP4620 is the highest performance trench BVDSS RDSON ID N-ch and P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and 30V 18m 8.8Agate charge for most of the synchronous buck -30V 22m -8.6Aconverter applications . The WSP4620 meet the RoHS and Green Applications P
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