WSP8810 PDF and Equivalents Search

 

WSP8810 Specs and Replacement

Type Designator: WSP8810

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 7.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14.5 nS

Cossⓘ - Output Capacitance: 175 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0145 Ohm

Package: TSSOP8

WSP8810 substitution

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WSP8810 datasheet

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WSP8810

WSP8810 Dual N-Channel MOSFET Product Summery General Description The WSP8810 is the highest performance trench BVDSS RDSON ID N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge 20V 11.5m 7.5A for most of the small power switching and load switch applications. Applications The WSP8810 meet the RoHS and Green Product requirement w... See More ⇒

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 wsp8810a.pdf pdf_icon

WSP8810

WSP8810A Dual N-Channel MOSFET Product Summery General Description The WSP8810A is the highest performance BVDSS RDSON ID trench N-ch MOSFET with extreme high cell 20V 14.5m 7.0A density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. Applications The WSP8810A meet the RoHS and Green High Frequency Po... See More ⇒

Detailed specifications: WSP6024, WSP6039, WSP6044, WSP6047, WSP6064, WSP6067, WSP6946, WSP8205, 8205A, WSP8810A, WSP9435, WSP9926A, WSP9926B, WSP9936, WSR10N65F, WSR140N08, WSR18P10

Keywords - WSP8810 MOSFET specs

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