All MOSFET. WSP8810 Datasheet

 

WSP8810 Datasheet and Replacement


   Type Designator: WSP8810
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id| ⓘ - Maximum Drain Current: 7.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 13.5 nC
   tr ⓘ - Rise Time: 14.5 nS
   Cossⓘ - Output Capacitance: 175 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0145 Ohm
   Package: TSSOP8
 

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WSP8810 Datasheet (PDF)

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WSP8810

WSP8810Dual N-Channel MOSFETProduct SummeryGeneral Description The WSP8810 is the highest performance trench BVDSS RDSON ID N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge 20V 11.5m 7.5Afor most of the small power switching and load switch applications. Applications The WSP8810 meet the RoHS and Green Product requirement w

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WSP8810

WSP8810ADual N-Channel MOSFETProduct SummeryGeneral Description The WSP8810A is the highest performance BVDSS RDSON ID trench N-ch MOSFET with extreme high cell 20V 14.5m 7.0Adensity , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. Applications The WSP8810A meet the RoHS and Green High Frequency Po

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History: JANSR2N7292

Keywords - WSP8810 MOSFET datasheet

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