WSR25N20 Datasheet. Specs and Replacement

Type Designator: WSR25N20  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 45 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 25 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 163 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm

Package: TO220F

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WSR25N20 datasheet

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WSR25N20

WSR25N20 N-Ch MOSFET General Description Product Summery The WSR25N20 is the highest performance trench RDSON ID BVDSS N-Ch MOSFET with extreme high cell density,which provide excellent RDSON and gate charge for most 200V 60m 25A of the synchronous buck converter applications . Applications The WSR25N20 meet the RoHS and Green Product requirement , 100% EAS guaranteed wi... See More ⇒

Detailed specifications: WSP9435, WSP9926A, WSP9926B, WSP9936, WSR10N65F, WSR140N08, WSR18P10, WSR200N08, IRF4905, WSR45P10, WSR4N65F, WSR60N06, WSR7N65F, WSR80N06, WSR80N08, WSR80N10, WSR80P06

Keywords - WSR25N20 MOSFET specs

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