All MOSFET. WSR25N20 Datasheet

 

WSR25N20 MOSFET. Datasheet pdf. Equivalent


   Type Designator: WSR25N20
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 25 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 60 nC
   trⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 163 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm
   Package: TO220F

 WSR25N20 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WSR25N20 Datasheet (PDF)

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 wsr25n20.pdf

WSR25N20 WSR25N20

WSR25N20 N-Ch MOSFETGeneral Description Product SummeryThe WSR25N20 is the highest performance trench RDSON ID BVDSS N-Ch MOSFET with extreme high cell density,which provide excellent RDSON and gate charge for most 200V 60m 25Aof the synchronous buck converter applications . Applications The WSR25N20 meet the RoHS and Green Product requirement , 100% EAS guaranteed wi

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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