All MOSFET. WSR25N20 Datasheet

 

WSR25N20 Datasheet and Replacement


   Type Designator: WSR25N20
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 25 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 163 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm
   Package: TO220F
 

 WSR25N20 substitution

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WSR25N20 Datasheet (PDF)

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WSR25N20

WSR25N20 N-Ch MOSFETGeneral Description Product SummeryThe WSR25N20 is the highest performance trench RDSON ID BVDSS N-Ch MOSFET with extreme high cell density,which provide excellent RDSON and gate charge for most 200V 60m 25Aof the synchronous buck converter applications . Applications The WSR25N20 meet the RoHS and Green Product requirement , 100% EAS guaranteed wi

Datasheet: WSP9435 , WSP9926A , WSP9926B , WSP9936 , WSR10N65F , WSR140N08 , WSR18P10 , WSR200N08 , 2N7000 , WSR45P10 , WSR4N65F , WSR60N06 , WSR7N65F , WSR80N06 , WSR80N08 , WSR80N10 , WSR80P06 .

History: AP2R403GMT-HF | IXFB72N55Q2 | SIR788DP | BUK753R5-60E | 2SK3149 | SI4860DY | IRL520NLPBF

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