All MOSFET. WSR7N65F Datasheet

 

WSR7N65F Datasheet and Replacement


   Type Designator: WSR7N65F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 48 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.3 Ohm
   Package: TO220F
 

 WSR7N65F substitution

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WSR7N65F Datasheet (PDF)

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WSR7N65F

WSR7N65F N-Ch MOSFETGeneral Description Product SummeryThe WSR7N65F is the highest performance trench RDSON ID BVDSS N-Ch MOSFET with extreme high cell density,which provide excellent RDSON and gate charge for most 650V 1.3 7Aof the synchronous buck converter applications . Applications The WSR7N65F meet the RoHS and Green Product requirement , 100% EAS guaranteed

Datasheet: WSR10N65F , WSR140N08 , WSR18P10 , WSR200N08 , WSR25N20 , WSR45P10 , WSR4N65F , WSR60N06 , 4435 , WSR80N06 , WSR80N08 , WSR80N10 , WSR80P06 , WST02N10 , WST03P06 , WST05N10 , WST05N10L .

History: IPA60R520CP | IRFH8318TRPBF | FK6K02010L | IRF7342D2 | IRF7326D2 | SJMN1K4R90ZD | RQJ0602EGDQA

Keywords - WSR7N65F MOSFET datasheet

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