All MOSFET. WSR7N65F Datasheet

 

WSR7N65F MOSFET. Datasheet pdf. Equivalent


   Type Designator: WSR7N65F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 48 W
   Maximum Drain-Source Voltage |Vds|: 650 V
   Maximum Gate-Source Voltage |Vgs|: 30 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
   Maximum Drain Current |Id|: 7 A
   Maximum Junction Temperature (Tj): 150 °C
   Total Gate Charge (Qg): 16 nC
   Rise Time (tr): 17 nS
   Drain-Source Capacitance (Cd): 100 pF
   Maximum Drain-Source On-State Resistance (Rds): 1.3 Ohm
   Package: TO220F

 WSR7N65F Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WSR7N65F Datasheet (PDF)

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wsr7n65f.pdf

WSR7N65F
WSR7N65F

WSR7N65F N-Ch MOSFETGeneral Description Product SummeryThe WSR7N65F is the highest performance trench RDSON ID BVDSS N-Ch MOSFET with extreme high cell density,which provide excellent RDSON and gate charge for most 650V 1.3 7Aof the synchronous buck converter applications . Applications The WSR7N65F meet the RoHS and Green Product requirement , 100% EAS guaranteed

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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