All MOSFET. IRF220 Datasheet

 

IRF220 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRF220

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 40 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 5 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 14.3 nC

Maximum Drain-Source On-State Resistance (Rds): 0.8 Ohm

Package: TO204AA

IRF220 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRF220 Datasheet (PDF)

1.1. irf2204pbf.pdf Size:258K _international_rectifier

IRF220
IRF220

PD - 95490A IRF2204PbF Typical Applications HEXFET® Power MOSFET Industrial Motor Drive D Features VDSS = 40V Advanced Process Technology Ultra Low On-Resistance RDS(on) = 3.6mΩ Dynamic dv/dt Rating G 175°C Operating Temperature ID = 210A† Fast Switching S Repetitive Avalanche Allowed up to Tjmax Lead-Free Description This HEXFET® Power MOSFET utilizes the las

1.2. irf2204lpbf irf2204spbf.pdf Size:323K _international_rectifier

IRF220
IRF220

PD - 95491A IRF2204SPbF Typical Applications IRF2204LPbF Industrial Motor Drive HEXFET® Power MOSFET D Features VDSS = 40V Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating RDS(on) = 3.6mΩ G 175°C Operating Temperature Fast Switching ID = 170A† Repetitive Avalanche Allowed up to Tjmax S Lead-Free Description This HEXFET® Power MOSFET util

 1.3. irf2204.pdf Size:141K _international_rectifier

IRF220
IRF220

PD - 94434 AUTOMOTIVE MOSFET IRF2204 Typical Applications HEXFET Power MOSFET ? Electric Power Steering D ? 14 Volts Automotive Electrical Systems VDSS = 40V Features ? Advanced Process Technology RDS(on) = 3.6m? ? Ultra Low On-Resistance G ? Dynamic dv/dt Rating ? 175C Operating Temperature ID = 210A S ? Fast Switching ? Repetitive Avalanche Allowed up to Tjmax Description

1.4. irf220 irf221 irf222 irf223.pdf Size:68K _harris_semi

IRF220
IRF220

Semiconductor IRF220, IRF221, IRF222, IRF223 4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 4.0A and 5.0A, 150V and 200V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power • rDS(ON) = 0.8Ω and 1.2Ω MOSFETs designed, tested, and guaranteed to withstand a specified

Datasheet: 2N7002MTF , 2N7002T , 2N7002V , 2N7002VA , 2N7002W , BSS138K , BSS138W , FCA16N60N , 2SK3562 , FCA20N60F , IRF221 , FCA22N60N , IRF222 , FCA35N60 , IRF223 , FCA36N60NF , IRF3705 .

 
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