All MOSFET. IRF220 Datasheet

 

IRF220 Datasheet and Replacement


   Type Designator: IRF220
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 14.3 nC
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
   Package: TO204AA
 
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IRF220 Datasheet (PDF)

 ..1. Size:68K  harris semi
irf220 irf221 irf222 irf223.pdf pdf_icon

IRF220

Semiconductor IRF220, IRF221,IRF222, IRF2234.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm,N-Channel Power MOSFETsOctober 1997Features Description 4.0A and 5.0A, 150V and 200V These are N-Channel enhancement mode silicon gatepower field effect transistors. They are advanced power rDS(ON) = 0.8 and 1.2MOSFETs designed, tested, and guaranteed to withstand aspecified

 0.1. Size:141K  international rectifier
irf2204.pdf pdf_icon

IRF220

PD - 94434AUTOMOTIVE MOSFETIRF2204Typical ApplicationsHEXFET Power MOSFET Electric Power SteeringD 14 Volts Automotive Electrical SystemsVDSS = 40VFeatures Advanced Process TechnologyRDS(on) = 3.6m Ultra Low On-ResistanceG Dynamic dv/dt Rating 175C Operating Temperature ID = 210AS Fast Switching Repetitive Avalanche Allowed u

 0.2. Size:258K  international rectifier
irf2204pbf.pdf pdf_icon

IRF220

PD - 95490AIRF2204PbFTypical ApplicationsHEXFET Power MOSFET Industrial Motor DriveDFeaturesVDSS = 40V Advanced Process Technology Ultra Low On-ResistanceRDS(on) = 3.6m Dynamic dv/dt RatingG 175C Operating TemperatureID = 210A Fast SwitchingS Repetitive Avalanche Allowed up to Tjmax Lead-FreeDescriptionThis HEXFET Power MOSFET utilizes the las

 0.3. Size:323K  international rectifier
irf2204lpbf irf2204spbf.pdf pdf_icon

IRF220

PD - 95491AIRF2204SPbFTypical Applications IRF2204LPbF Industrial Motor DriveHEXFET Power MOSFETDFeaturesVDSS = 40V Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating RDS(on) = 3.6mG 175C Operating Temperature Fast SwitchingID = 170A Repetitive Avalanche Allowed up to TjmaxS Lead-FreeDescriptionThis HEXFET Power MOSFET util

Datasheet: 2N7002MTF , 2N7002T , 2N7002V , 2N7002VA , 2N7002W , BSS138K , BSS138W , FCA16N60N , CEP83A3 , FCA20N60F , IRF221 , FCA22N60N , IRF222 , FCA35N60 , IRF223 , FCA36N60NF , IRF3705 .

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