IRF220 Datasheet. Specs and Replacement

Type Designator: IRF220  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 40 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm

Package: TO204AA

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IRF220 substitution

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IRF220 datasheet

 ..1. Size:68K  harris semi
irf220 irf221 irf222 irf223.pdf pdf_icon

IRF220

Semiconductor IRF220, IRF221, IRF222, IRF223 4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs October 1997 Features Description 4.0A and 5.0A, 150V and 200V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power rDS(ON) = 0.8 and 1.2 MOSFETs designed, tested, and guaranteed to withstand a specified ... See More ⇒

 0.1. Size:141K  international rectifier
irf2204.pdf pdf_icon

IRF220

PD - 94434 AUTOMOTIVE MOSFET IRF2204 Typical Applications HEXFET Power MOSFET Electric Power Steering D 14 Volts Automotive Electrical Systems VDSS = 40V Features Advanced Process Technology RDS(on) = 3.6m Ultra Low On-Resistance G Dynamic dv/dt Rating 175 C Operating Temperature ID = 210A S Fast Switching Repetitive Avalanche Allowed u... See More ⇒

 0.2. Size:258K  international rectifier
irf2204pbf.pdf pdf_icon

IRF220

PD - 95490A IRF2204PbF Typical Applications HEXFET Power MOSFET Industrial Motor Drive D Features VDSS = 40V Advanced Process Technology Ultra Low On-Resistance RDS(on) = 3.6m Dynamic dv/dt Rating G 175 C Operating Temperature ID = 210A Fast Switching S Repetitive Avalanche Allowed up to Tjmax Lead-Free Description This HEXFET Power MOSFET utilizes the las... See More ⇒

 0.3. Size:323K  international rectifier
irf2204lpbf irf2204spbf.pdf pdf_icon

IRF220

PD - 95491A IRF2204SPbF Typical Applications IRF2204LPbF Industrial Motor Drive HEXFET Power MOSFET D Features VDSS = 40V Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating RDS(on) = 3.6m G 175 C Operating Temperature Fast Switching ID = 170A Repetitive Avalanche Allowed up to Tjmax S Lead-Free Description This HEXFET Power MOSFET util... See More ⇒

Detailed specifications: 2N7002MTF, 2N7002T, 2N7002V, 2N7002VA, 2N7002W, BSS138K, BSS138W, FCA16N60N, AOD4184A, FCA20N60F, IRF221, FCA22N60N, IRF222, FCA35N60, IRF223, FCA36N60NF, IRF3705

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