IRF220 - описание и поиск аналогов

Semiconductor IRF220, IRF221, IRF222, IRF223 4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs October 1997 Features Description 4.0A and 5.0A, 150V and 200V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power rDS(ON) = 0.8 and 1.2 MOSFETs designed, tested, and guaranteed to withstand a specified

PD - 94434 AUTOMOTIVE MOSFET IRF2204 Typical Applications HEXFET Power MOSFET Electric Power Steering D 14 Volts Automotive Electrical Systems VDSS = 40V Features Advanced Process Technology RDS(on) = 3.6m Ultra Low On-Resistance G Dynamic dv/dt Rating 175 C Operating Temperature ID = 210A S Fast Switching Repetitive Avalanche Allowed u

PD - 95490A IRF2204PbF Typical Applications HEXFET Power MOSFET Industrial Motor Drive D Features VDSS = 40V Advanced Process Technology Ultra Low On-Resistance RDS(on) = 3.6m Dynamic dv/dt Rating G 175 C Operating Temperature ID = 210A Fast Switching S Repetitive Avalanche Allowed up to Tjmax Lead-Free Description This HEXFET Power MOSFET utilizes the las

PD - 95491A IRF2204SPbF Typical Applications IRF2204LPbF Industrial Motor Drive HEXFET Power MOSFET D Features VDSS = 40V Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating RDS(on) = 3.6m G 175 C Operating Temperature Fast Switching ID = 170A Repetitive Avalanche Allowed up to Tjmax S Lead-Free Description This HEXFET Power MOSFET util

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF2204S FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF2204 IIRF2204 FEATURES Static drain-source on-resistance RDS(on) 3.6m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM