WST3392 MOSFET. Datasheet pdf. Equivalent
Type Designator: WST3392
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.15 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 3.7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 1.5 nS
Cossⓘ - Output Capacitance: 35 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
Package: SOT23-6L
WST3392 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WST3392 Datasheet (PDF)
wst3392.pdf
WST3392Dual N-Ch MOSFETGeneral Description Product SummeryThe WST3392 is the highest performance BVDSS RDSON ID trench N-ch MOSFETs with extreme high cell 3.7A30V 40mdensity , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. Applications The WST3392 meet the RoHS and Green Product requirement with full
wst3325.pdf
WST3325 P-Ch MOSFETGeneral Description Product SummeryTheWST3325 is the highest performance trench BVDSS RDSON ID P-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate -20V 42m -5.6Acharge for most of the small power switching and load switch applications. Applications The WST3325 meet the RoHS and Green Product requirement , with full
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
