All MOSFET. 2N6762JAN Datasheet

 

2N6762JAN Datasheet and Replacement


   Type Designator: 2N6762JAN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 50 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 4.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 30 nC
   trⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 200 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
   Package: TO3
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2N6762JAN Datasheet (PDF)

 8.1. Size:146K  international rectifier
 2n6762 irf430.pdf pdf_icon

2N6762JAN

PD - 90336FIRF430REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6762HEXFETTRANSISTORS JANTXV2N6762THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/542]500V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRF430 500V 1.5 4.5AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique proces

 8.2. Size:137K  fairchild semi
 2n6761 2n6762.pdf pdf_icon

2N6762JAN

 9.1. Size:142K  1
 2n6766.pdf pdf_icon

2N6762JAN

 9.2. Size:140K  1
 2n6768.pdf pdf_icon

2N6762JAN

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Datasheet: 2N6760 , 2N6760JAN , 2N6760JANTX , 2N6760JANTXV , 2N6760JTX , 2N6760JTXV , 2N6761 , 2N6762 , 4435 , 2N6762JANTX , 2N6762JANTXV , 2N6762JTX , 2N6762JTXV , 2N6763 , 2N6764 , 2N6764JAN , 2N6764JANTX .

History: IXTB30N100L | APT8052BFLLG | GSM4822WS | WSD3042DN56 | IPD60R600C6

Keywords - 2N6762JAN MOSFET datasheet

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