2N6762JAN Specs and Replacement

Type Designator: 2N6762JAN

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 50 V

|Id| ⓘ - Maximum Drain Current: 4.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 200 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm

Package: TO3

2N6762JAN substitution

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2N6762JAN datasheet

 8.1. Size:146K  international rectifier
 2n6762 irf430.pdf pdf_icon

2N6762JAN

PD - 90336F IRF430 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6762 HEXFET TRANSISTORS JANTXV2N6762 THRU-HOLE (TO-204AA/AE) [REF MIL-PRF-19500/542] 500V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF430 500V 1.5 4.5A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique proces... See More ⇒

 8.2. Size:137K  fairchild semi
 2n6761 2n6762.pdf pdf_icon

2N6762JAN

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 9.1. Size:142K  1
 2n6766.pdf pdf_icon

2N6762JAN

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 9.2. Size:140K  1
 2n6768.pdf pdf_icon

2N6762JAN

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Detailed specifications: 2N6760, 2N6760JAN, 2N6760JANTX, 2N6760JANTXV, 2N6760JTX, 2N6760JTXV, 2N6761, 2N6762, TK10A60D, 2N6762JANTX, 2N6762JANTXV, 2N6762JTX, 2N6762JTXV, 2N6763, 2N6764, 2N6764JAN, 2N6764JANTX

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.