2N6762JAN Datasheet and Replacement
Type Designator: 2N6762JAN
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 50 V
|Id| ⓘ - Maximum Drain Current: 4.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 200 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
Package: TO3
2N6762JAN substitution
2N6762JAN Datasheet (PDF)
2n6762 irf430.pdf
PD - 90336FIRF430REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6762HEXFETTRANSISTORS JANTXV2N6762THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/542]500V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRF430 500V 1.5 4.5AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique proces
Datasheet: 2N6760 , 2N6760JAN , 2N6760JANTX , 2N6760JANTXV , 2N6760JTX , 2N6760JTXV , 2N6761 , 2N6762 , TK10A60D , 2N6762JANTX , 2N6762JANTXV , 2N6762JTX , 2N6762JTXV , 2N6763 , 2N6764 , 2N6764JAN , 2N6764JANTX .
History: AM3405P | WMO15N10T1 | 2N65L | WMO07N105C2 | WMU080N10HG2 | FK16VS-6 | WMM90N08TS
Keywords - 2N6762JAN MOSFET datasheet
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2N6762JAN replacement
Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: AM3405P | WMO15N10T1 | 2N65L | WMO07N105C2 | WMU080N10HG2 | FK16VS-6 | WMM90N08TS
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