WST6225 Datasheet and Replacement
Type Designator: WST6225
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 5.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 45 nS
Cossⓘ - Output Capacitance: 108 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
Package: SOT23
WST6225 substitution
WST6225 Datasheet (PDF)
wst6225.pdf

WST6225 P-Ch MOSFETGeneral Description Product SummeryTheWST6225 is the highest performance trench BVDSS RDSON ID P-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge -20V 42m -5.1Afor most of the small power switching and load switch applications. Applications The WST6225 meet the RoHS and Green Product requirement , with full fu
Datasheet: WST4040 , WST4041 , WST4045 , WST6002 , WST6003 , WST6008 , WST6045 , WST6066A , IRF640N , WST6401 , WST6402 , WST8205 , WST8205A , WSTBSS123 , WSTBSS138 , WCM2079 , WNM01N10 .
History: WMN10N80M3 | 2SK2715 | WMN11N80M3 | SML100J34 | SDF044JAA-U | WMJ10N80D1 | WMO10N70D1
Keywords - WST6225 MOSFET datasheet
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History: WMN10N80M3 | 2SK2715 | WMN11N80M3 | SML100J34 | SDF044JAA-U | WMJ10N80D1 | WMO10N70D1



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