WST6225 Datasheet and Replacement
Type Designator: WST6225
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id|ⓘ - Maximum Drain Current: 5.1 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 45 nS
Cossⓘ - Output Capacitance: 108 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
Package: SOT23
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WST6225 Datasheet (PDF)
wst6225.pdf

WST6225 P-Ch MOSFETGeneral Description Product SummeryTheWST6225 is the highest performance trench BVDSS RDSON ID P-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge -20V 42m -5.1Afor most of the small power switching and load switch applications. Applications The WST6225 meet the RoHS and Green Product requirement , with full fu
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: NCE1805S | UF830L-TM3-T | HFD8N70U | JCS8N60CB | AON6586 | HYG007N03LS1C2 | MTH13N45
Keywords - WST6225 MOSFET datasheet
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History: NCE1805S | UF830L-TM3-T | HFD8N70U | JCS8N60CB | AON6586 | HYG007N03LS1C2 | MTH13N45



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