All MOSFET. WST8205A Datasheet

 

WST8205A Datasheet and Replacement


   Type Designator: WST8205A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V
   |Id| ⓘ - Maximum Drain Current: 5.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 8.3 nC
   tr ⓘ - Rise Time: 34 nS
   Cossⓘ - Output Capacitance: 69 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
   Package: SOT23-6L
 

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WST8205A Datasheet (PDF)

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WST8205A

WST8205ADual N-Ch MOSFETGeneral Description Product SummeryThe WST8205A is the highest performance trench BVDSS RDSON ID N-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge 20V 32m 5.3Afor most of the small power switching and load switch applications.Applications The WST8205A meet the RoHS and Green High Frequency Point-of-Load

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WST8205A

WST8205Dual N-Ch MOSFETGeneral Description Product SummeryThe WST8205 is the highest performance trench BVDSS RDSON ID N-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge 20V 24m 5.8Afor most of the small power switching and load switch applications. Applications The WST8205 meet the RoHS and Green Product High Frequency Point-

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