All MOSFET. WSTBSS138 Datasheet

 

WSTBSS138 Datasheet and Replacement


   Type Designator: WSTBSS138
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3.5 nS
   Cossⓘ - Output Capacitance: 40 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
   Package: SOT23
 

 WSTBSS138 substitution

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WSTBSS138 Datasheet (PDF)

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WSTBSS138

WSTBSS138N-Ch MOSFETGeneral Description Product SummeryThe WSTBSS138 is the highest performance BVDSS RDSON ID trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate 110m 60V 2.1A charge for most of the synchronous buck converter applications . Applications The WSTBSS138 meet the RoHS and Green Product requirement , 100% EAS guara

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WSTBSS138

WSTBSS123N-Ch MOSFETProduct SummeryGeneral Description The WSTBSS123 is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell 100V 210m 2.0Adensity , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. Applications The WSTBSS123 meet the RoHS and Green High Frequency Point-of-L

Datasheet: WST6045 , WST6066A , WST6225 , WST6401 , WST6402 , WST8205 , WST8205A , WSTBSS123 , IRFB4227 , WCM2079 , WNM01N10 , WNM2016A , WNM2046C , WNM2077 , WNM3018 , WNM3025 , WNM6002 .

History: FDB86366-F085

Keywords - WSTBSS138 MOSFET datasheet

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