WNM6002 MOSFET. Datasheet pdf. Equivalent
Type Designator: WNM6002
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.31 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 0.28 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 5.1 nS
Cossⓘ - Output Capacitance: 7.33 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
Package: SOT323
WNM6002 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WNM6002 Datasheet (PDF)
wnm6002.pdf
WNM6002W 2 WNM6002 Single N-Channel, 60V, 0.30A, Power MOSFET Http//:www.sh-willsemi.com VDS (V) Rds(on) () D1.4@ VGS=10V 60 1.7@ VGS=4.5V ESD Rating:2000V HBM S GDescriptions SOT-323 The WNM6 is N-C enhancement M Field 6002 Channel MOS D Effect Transistor. Uses trench techns advanced t nology and 3 design to provide excellent RDS(ON) with low gaate cha
wnm6001.pdf
WNM6001 WNM6001 Single N-Channel, 60V, 0.50A, Power MOSFET Http//:www.sh-willsemi.com VDS (V) Rds(on) () 1.4@ VGS=10V 60 1.7@ VGS=4.5V ESD Rating:2000V HBM SOT-23 Descriptions The WNM6001 is N-Channel enhancement D MOS Field Effect Transistor. Uses advanced trench 3 technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable
ywnm6001.pdf
YWNM6001SOT-23Small Signal MOSFET380 mAmps, 60 Volts NChannel 1. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free.S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable.ESD Protected2. DEVICE MARKING AND ORDERING INFORMATION
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
