All MOSFET. WPT2N32 Datasheet

 

WPT2N32 MOSFET. Datasheet pdf. Equivalent


   Type Designator: WPT2N32
   Marking Code: 2N32
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 6 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.86 V
   |Id|ⓘ - Maximum Drain Current: 0.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 1.15 nC
   trⓘ - Rise Time: 102 nS
   Cossⓘ - Output Capacitance: 17 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
   Package: DFN2X2-6L

 WPT2N32 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WPT2N32 Datasheet (PDF)

 ..1. Size:347K  willsemi
 wpt2n32.pdf

WPT2N32 WPT2N32

WPT2N32 WPT2N32 Single, PNP, -30V, -1A, Power Transistor with Http//:www.willsemi.com 20V N-MOSFET Descriptions The WPT2N32 is PNP bipolar power transistor with 20V N-MOSFET. This device is suitable for use in charging circuit and other power management. DFN2x2-6L Standard Product WPT2N32 is Pb-free. C 6 1 E C B G 5 2 DFeatures D3 S 4 Ultra low collec

 8.1. Size:1363K  willsemi
 wpt2n31.pdf

WPT2N32 WPT2N32

WPT2N31 WPT2N31 Http://www.sh-willsemi.com Single, PNP, -30V, -3A, Power Transistor with 20V N-MOSFET Descriptions The WPT2N31 is PNP bipolar power transistor with 20V N-MOSFET. This device is suitable for use in charging circuit and other power management. Standard Product WPT2N31 is Pb-free. Pin configuration (Top view) Features Ultra low collector-to-emitter satu

 9.1. Size:807K  willsemi
 wpt2n41.pdf

WPT2N32 WPT2N32

WPT2N41 WPT2N41 Single, PNP, -30V, -3A, Power Transistor Http://www.sh-willsemi.com Descriptions The WPT2N41 is PNP bipolar power transistor with very low saturation voltage. This device is suitable for use in charging circuit and power management. Standard Product WPT2N41 is Pb-free. Pin configuration (Top view) Features Ultra low collector-to-emitter saturation volta

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