MT7N65-220F Datasheet and Replacement
Type Designator: MT7N65-220F
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 48 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 7.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 79 nS
Cossⓘ - Output Capacitance: 150 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.35 Ohm
Package: TO220F
MT7N65-220F substitution
MT7N65-220F Datasheet (PDF)
mt7n65.pdf

Oct 2014MT7N65N-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThis series is a high voltage power MOSFET For a single MOSFETand is designed to have better characteristics, V = 650VDSsuch as fast switching time, low gate charge, R = 1 @ V =10V, I =3.7ADS(ON) GS DSlow on-state resistance and have a highrugged avalanche characteristicsPin
Datasheet: WPM2087 , WPM3020 , WPM3021 , WPM3022 , WPT2N31 , WPT2N32 , FKBA4903 , MT7N65 , AON7410 , SE01P13K , SE100130A , SE100130GA , SE10015 , SE100150G , SE100180GA , SE100250GTS , SE1003 .
History: G08N06S | IPL60R1K5C6S | SFP740 | IRFR9310PBF | AOD242 | AM110P06-06B | NCEP02T11T
Keywords - MT7N65-220F MOSFET datasheet
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History: G08N06S | IPL60R1K5C6S | SFP740 | IRFR9310PBF | AOD242 | AM110P06-06B | NCEP02T11T



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