MT7N65-220F MOSFET. Datasheet pdf. Equivalent
Type Designator: MT7N65-220F
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 48 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 7.4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 30 nC
trⓘ - Rise Time: 79 nS
Cossⓘ - Output Capacitance: 150 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.35 Ohm
Package: TO220F
MT7N65-220F Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MT7N65-220F Datasheet (PDF)
8.1. Size:977K cn sino-ic
mt7n65.pdf
mt7n65.pdf
Oct 2014MT7N65N-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThis series is a high voltage power MOSFET For a single MOSFETand is designed to have better characteristics, V = 650VDSsuch as fast switching time, low gate charge, R = 1 @ V =10V, I =3.7ADS(ON) GS DSlow on-state resistance and have a highrugged avalanche characteristicsPin
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