SE150110G MOSFET. Datasheet pdf. Equivalent
Type Designator: SE150110G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 110 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 150 nC
trⓘ - Rise Time: 52 nS
Cossⓘ - Output Capacitance: 2046 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0078 Ohm
Package: TO220 TO263 TO247
SE150110G Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SE150110G Datasheet (PDF)
se150110g.pdf
SE150110GN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesFor a single MOSFETAdvanced trench technology to provideexcellent RDS(ON), low gate charge and V =150VDSlow operation voltage. This device is R =6m @V =10VDS(ON) GSsuitable for using as a load switch or inPWM applications. Simple Drive Requirement Small Package Outline
se150180g.pdf
SE150180GN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesFor a single MOSFETAdvanced trench technology to provideexcellent RDS(ON), low gate charge and V = 150VDSlow operation voltage. This device is R =4.4m @V =10VDS(ON) GSsuitable for using as a load switch or inPWM applications. Simple Drive Requirement Small Package Outline
se150180gts.pdf
SE150180GTSN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesFor a single MOSFETAdvanced trench technology to provideexcellent RDS(ON), low gate charge and V = 150VDSlow operation voltage. This device is R =4.8m @V =10VDS(ON) GSsuitable for using as a load switch or inPWM applications. Simple Drive Requirement Small Package Outlin
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
