SE150110G
MOSFET. Datasheet pdf. Equivalent
Type Designator: SE150110G
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 300
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 110
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 150
nC
trⓘ - Rise Time: 52
nS
Cossⓘ -
Output Capacitance: 2046
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0078
Ohm
Package:
TO220
TO263
TO247
SE150110G
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SE150110G
Datasheet (PDF)
..1. Size:490K cn sino-ic
se150110g.pdf 
SE150110GN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesFor a single MOSFETAdvanced trench technology to provideexcellent RDS(ON), low gate charge and V =150VDSlow operation voltage. This device is R =6m @V =10VDS(ON) GSsuitable for using as a load switch or inPWM applications. Simple Drive Requirement Small Package Outline
8.1. Size:397K cn sino-ic
se150180g.pdf
SE150180GN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesFor a single MOSFETAdvanced trench technology to provideexcellent RDS(ON), low gate charge and V = 150VDSlow operation voltage. This device is R =4.4m @V =10VDS(ON) GSsuitable for using as a load switch or inPWM applications. Simple Drive Requirement Small Package Outline
8.2. Size:339K cn sino-ic
se150180gts.pdf
SE150180GTSN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesFor a single MOSFETAdvanced trench technology to provideexcellent RDS(ON), low gate charge and V = 150VDSlow operation voltage. This device is R =4.8m @V =10VDS(ON) GSsuitable for using as a load switch or inPWM applications. Simple Drive Requirement Small Package Outlin
Datasheet: AM3401
, AM3402N
, AM3403P
, AM3405P
, AM3406
, AM3406N
, AM3407
, AM3407PE
, SKD502T
, AM3412N
, AM3413
, AM3413P
, AM3415
, AM3415A
, AM3416
, AM3422
, AM3423P
.
