SE30150
MOSFET. Datasheet pdf. Equivalent
Type Designator: SE30150
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 42
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3
V
|Id|ⓘ - Maximum Drain Current: 90
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 21
nC
trⓘ - Rise Time: 11.5
nS
Cossⓘ -
Output Capacitance: 53
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0027
Ohm
Package:
TO263
SE30150
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SE30150
Datasheet (PDF)
..1. Size:676K cn sino-ic
se30150.pdf 
SE30150N-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesFor a single MOSFETAdvanced trench technology to provideexcellent RDS(ON), low gate charge and V =30VDSlow operation voltage. This device is R =2.3m @V =10VDS(ON) GSsuitable for using as a load switch or inPWM applications. Simple Drive Requirement Small Package Outline
0.1. Size:371K cn sino-ic
se30150b.pdf
Dec 2014SE30150BN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThigh Density Cell Design For Ultra Low For a single MOSFETOn-Resistance Fully Characterized Avalanche V =30VDSVoltage and Current Improved Shoot-Through R =1.6m @V =10 @I =30ADS(ON) GS DSFOM R =2.1m @V =4.5 @I =25ADS(ON) GS DS Simple Drive Requirement Sma
0.2. Size:334K cn sino-ic
se30150a.pdf
Dec 2014SE30150AN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThigh Density Cell Design For Ultra Low For a single MOSFETOn-Resistance Fully Characterized Avalanche V =30VDSVoltage and Current Improved Shoot-Through R =2.1m @V =10VDS(ON) GSFOM Simple Drive Requirement Small Package Outline Surface Mount DevicePin config
9.1. Size:535K cn sino-ic
se30100b.pdf
Jan 2015SE30100BN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThis type used advanced trench technology and For a single MOSFETdesign to provide excellent R with low gateDS(ON) V =30VDScharge. R =3m @V =10VDS(ON) GS High density cell design for ultra low RDS(ON) Excellent package for good heat dissipationPin configurations
9.2. Size:563K cn sino-ic
se3018.pdf
Apr 2015 SE3018 N-Channel Enhancement-Mode MOSFET Revision: A General Description Features Thigh Density Cell Design For Ultra Low For a single MOSFET On-Resistance Fully Characterized Avalanche V = 50V DSVoltage and Current Improved Shoot-Through R = 2.3 @ V =4.5 DS(ON) GSFOM Simple Drive Requirement Small Package Outline Surface Mount Device
Datasheet: FMP36-015P
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.
