2SJ245 Datasheet. Specs and Replacement

Type Designator: 2SJ245  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 20 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm

Package: DPAK

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2SJ245 datasheet

 ..1. Size:227K  hitachi
2sj245.pdf pdf_icon

2SJ245

www.DataSheet4U.com 2SJ245 L , 2SJ245 S SILICON P-CHANNEL MOS FET Application DPAK 1 4 High speed power switching 4 Features 1 2 3 1 2 3 Low on resistance High speed switching 2, 4 Low drive current 4 V Gate drive device can be driven 1 from 5 V source 1. Gate Suitable for Switching regulator, DC DC 2. Drain converter 3. Source 3 4. Drai... See More ⇒

 0.1. Size:36K  hitachi
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2SJ245

2SJ245 L , 2SJ245 S SILICON P-CHANNEL MOS FET Application DPAK 1 4 High speed power switching 4 Features 1 2 3 1 2 3 Low on resistance High speed switching 2, 4 Low drive current 4 V Gate drive device can be driven 1 from 5 V source 1. Gate Suitable for Switching regulator, DC DC 2. Drain converter 3. Source 3 4. Drain Table 1 Absolute M... See More ⇒

 9.1. Size:40K  1
2sj243.pdf pdf_icon

2SJ245

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ243 P-CHANNEL MOS FET FOR SWITCHING The 2SJ243 is a P-channel vertical type MOS FET that is driven PACKAGE DIMENSIONS (in mm) at 2.5 V. 0.3 0.05 Because this MOS FET can be driven on a low voltage and 0.1+0.1 0.05 because it is not necessary to consider the drive current, the 2SJ243 is ideal for driving the actuator of power-saving sy... See More ⇒

 9.2. Size:200K  toshiba
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2SJ245

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Detailed specifications: IRF3705, FCA47N60, BUZ81, FCA47N60F109, FQP10N60C, FQPF10N60C, FCA47N60F, FCA76N60N, IRFP460, FCB11N60, 2SK3653, FCB20N60, 2SK3057, 2SK3469-01MR, FCB20N60F, FCB36N60N, 2SJ279

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