All MOSFET. SE40120A Datasheet

 

SE40120A Datasheet and Replacement


   Type Designator: SE40120A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 130 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 120 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 970 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
   Package: TO220
 

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SE40120A Datasheet (PDF)

 ..1. Size:1265K  cn sino-ic
 se40120a.pdf pdf_icon

SE40120A

 9.1. Size:316K  cn sino-ic
 se40160a.pdf pdf_icon

SE40120A

SE40160AN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThigh Density Cell Design For Ultra Low For a single MOSFETOn-Resistance Fully Characterized Avalanche V =40VDSVoltage and Current Improved Shoot-Through R =4m @V =10VDS(ON) GSFOM Simple Drive Requirement Small Package Outline Surface Mount DevicePin configurationsSe

 9.2. Size:901K  cn sino-ic
 se40150.pdf pdf_icon

SE40120A

SE40150N-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThigh Density Cell Design For Ultra Low For a single MOSFETOn-Resistance Fully Characterized Avalanche V = 40VDSVoltage and Current Improved Shoot-Through R = 1.9m @ V =10VDS(ON) GSFOM Simple Drive Requirement Small Package Outline Surface Mount DevicePin configurations

Datasheet: SE30P09D , SE30P12 , SE30P12D , SE30P50 , SE30P50B , SE3205A , SE3401B , SE3N150P , IRF840 , SE40150 , SE40160A , SE4020B , SE40300GTS , SE4060 , SE6080S , SE8090S , SE4060GB .

Keywords - SE40120A MOSFET datasheet

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