SE40150 MOSFET Datasheet: N-Ch, 40V, 150A. Full specification with pinout and replacement list

SE40150 Specs and Replacement

Type Designator: SE40150

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 310 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 150 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 nS

Cossⓘ - Output Capacitance: 1160 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0024 Ohm

Package: TO220 TO263 TO252 DFN5X6

SE40150 substitution

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SE40150 datasheet

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SE40150 N-Channel Enhancement-Mode MOSFET Revision A General Description Features Thigh Density Cell Design For Ultra Low For a single MOSFET On-Resistance Fully Characterized Avalanche V = 40V DS Voltage and Current Improved Shoot-Through R = 1.9m @ V =10V DS(ON) GS FOM Simple Drive Requirement Small Package Outline Surface Mount Device Pin configurations ... See More ⇒

9.1. Size:1265K cn sino-ic
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9.2. Size:316K cn sino-ic
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SE40160A N-Channel Enhancement-Mode MOSFET Revision A General Description Features Thigh Density Cell Design For Ultra Low For a single MOSFET On-Resistance Fully Characterized Avalanche V =40V DS Voltage and Current Improved Shoot-Through R =4m @V =10V DS(ON) GS FOM Simple Drive Requirement Small Package Outline Surface Mount Device Pin configurations Se... See More ⇒

Detailed specifications: SE30P12, SE30P12D, SE30P50, SE30P50B, SE3205A, SE3401B, SE3N150P, SE40120A, IRF540N, SE40160A, SE4020B, SE40300GTS, SE4060, SE6080S, SE8090S, SE4060GB, SE40P20B