SE40150 Datasheet and Replacement
Type Designator: SE40150
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 310 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 150 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 1160 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0024 Ohm
Package: TO220 TO263 TO252 DFN5X6
SE40150 substitution
SE40150 Datasheet (PDF)
se40150.pdf
SE40150N-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThigh Density Cell Design For Ultra Low For a single MOSFETOn-Resistance Fully Characterized Avalanche V = 40VDSVoltage and Current Improved Shoot-Through R = 1.9m @ V =10VDS(ON) GSFOM Simple Drive Requirement Small Package Outline Surface Mount DevicePin configurations
se40160a.pdf
SE40160AN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThigh Density Cell Design For Ultra Low For a single MOSFETOn-Resistance Fully Characterized Avalanche V =40VDSVoltage and Current Improved Shoot-Through R =4m @V =10VDS(ON) GSFOM Simple Drive Requirement Small Package Outline Surface Mount DevicePin configurationsSe
Datasheet: SE30P12 , SE30P12D , SE30P50 , SE30P50B , SE3205A , SE3401B , SE3N150P , SE40120A , IRF540N , SE40160A , SE4020B , SE40300GTS , SE4060 , SE6080S , SE8090S , SE4060GB , SE40P20B .
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