All MOSFET. SE40160A Datasheet

 

SE40160A Datasheet and Replacement


   Type Designator: SE40160A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 160 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 36 nS
   Cossⓘ - Output Capacitance: 898 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
   Package: TO220
 

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SE40160A Datasheet (PDF)

 ..1. Size:316K  cn sino-ic
 se40160a.pdf pdf_icon

SE40160A

SE40160AN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThigh Density Cell Design For Ultra Low For a single MOSFETOn-Resistance Fully Characterized Avalanche V =40VDSVoltage and Current Improved Shoot-Through R =4m @V =10VDS(ON) GSFOM Simple Drive Requirement Small Package Outline Surface Mount DevicePin configurationsSe

 9.1. Size:1265K  cn sino-ic
 se40120a.pdf pdf_icon

SE40160A

 9.2. Size:901K  cn sino-ic
 se40150.pdf pdf_icon

SE40160A

SE40150N-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThigh Density Cell Design For Ultra Low For a single MOSFETOn-Resistance Fully Characterized Avalanche V = 40VDSVoltage and Current Improved Shoot-Through R = 1.9m @ V =10VDS(ON) GSFOM Simple Drive Requirement Small Package Outline Surface Mount DevicePin configurations

Datasheet: SE30P12D , SE30P50 , SE30P50B , SE3205A , SE3401B , SE3N150P , SE40120A , SE40150 , IRF540N , SE4020B , SE40300GTS , SE4060 , SE6080S , SE8090S , SE4060GB , SE40P20B , SE4435 .

History: 2SK806 | DMN3035LWN | KQB6N25 | CSD19533KCS | P2610BT | FQD2N50TF | AO6411

Keywords - SE40160A MOSFET datasheet

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