SE40160A MOSFET Datasheet: N-Ch, 40V, 160A. Full specification with pinout and replacement list

SE40160A Specs and Replacement

Type Designator: SE40160A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 160 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 36 nS

Cossⓘ - Output Capacitance: 898 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm

Package: TO220

SE40160A substitution

- MOSFET ⓘ Cross-Reference Search

SE40160A datasheet

..1. Size:316K cn sino-ic
se40160a.pdf pdf_icon

SE40160A N-Channel Enhancement-Mode MOSFET Revision A General Description Features Thigh Density Cell Design For Ultra Low For a single MOSFET On-Resistance Fully Characterized Avalanche V =40V DS Voltage and Current Improved Shoot-Through R =4m @V =10V DS(ON) GS FOM Simple Drive Requirement Small Package Outline Surface Mount Device Pin configurations Se... See More ⇒

9.1. Size:1265K cn sino-ic
se40120a.pdf pdf_icon

... See More ⇒

9.2. Size:901K cn sino-ic
se40150.pdf pdf_icon

SE40150 N-Channel Enhancement-Mode MOSFET Revision A General Description Features Thigh Density Cell Design For Ultra Low For a single MOSFET On-Resistance Fully Characterized Avalanche V = 40V DS Voltage and Current Improved Shoot-Through R = 1.9m @ V =10V DS(ON) GS FOM Simple Drive Requirement Small Package Outline Surface Mount Device Pin configurations ... See More ⇒

Detailed specifications: SE30P12D, SE30P50, SE30P50B, SE3205A, SE3401B, SE3N150P, SE40120A, SE40150, IRF540, SE4020B, SE40300GTS, SE4060, SE6080S, SE8090S, SE4060GB, SE40P20B, SE4435