All MOSFET. SE4060 Datasheet

 

SE4060 Datasheet and Replacement


   Type Designator: SE4060
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 65 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 17.2 nS
   Cossⓘ - Output Capacitance: 280 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
   Package: SOP8
 

 SE4060 substitution

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SE4060 Datasheet (PDF)

 ..1. Size:910K  cn sino-ic
 se4060 se6080s se8090s.pdf pdf_icon

SE4060

May 2015SE4060,SE6080S,SE8090SN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThigh Density Cell Design For Ultra Low For a single MOSFETOn-Resistance Fully Characterized Avalanche V =40VDSVoltage and Current Improved Shoot-Through R =7m @V =10VDS(ON) GSFOM Simple Drive Requirement Small Package Outline Surface Mount Device

 0.1. Size:340K  cn sino-ic
 se4060gb.pdf pdf_icon

SE4060

SE4060GBN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThigh Density Cell Design For Ultra Low For a single MOSFETOn-Resistance Fully Characterized Avalanche V =45VDSVoltage and Current Improved Shoot-Through R =7.5m @V =10VDS(ON) GSFOM Simple Drive Requirement Small Package Outline Surface Mount DevicePin configurations

Datasheet: SE3205A , SE3401B , SE3N150P , SE40120A , SE40150 , SE40160A , SE4020B , SE40300GTS , IRFZ44 , SE6080S , SE8090S , SE4060GB , SE40P20B , SE4435 , SE4606 , SE4606L , SE4606S .

History: SKST065N08N | DH020N03E | IXTH60N15 | NP82N04NUG | FCH023N65S3 | 2P979V | 2SK3501-01

Keywords - SE4060 MOSFET datasheet

 SE4060 cross reference
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