SE4060 MOSFET Datasheet: N-Ch, 40V, 60A. Full specification with pinout and replacement list

SE4060 Specs and Replacement

Type Designator: SE4060

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 65 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17.2 nS

Cossⓘ - Output Capacitance: 280 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm

Package: SOP8

SE4060 substitution

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SE4060 datasheet

..1. Size:910K cn sino-ic
se4060 se6080s se8090s.pdf pdf_icon

May 2015 SE4060,SE6080S,SE8090S N-Channel Enhancement-Mode MOSFET Revision A General Description Features Thigh Density Cell Design For Ultra Low For a single MOSFET On-Resistance Fully Characterized Avalanche V =40V DS Voltage and Current Improved Shoot-Through R =7m @V =10V DS(ON) GS FOM Simple Drive Requirement Small Package Outline Surface Mount Device... See More ⇒

0.1. Size:340K cn sino-ic
se4060gb.pdf pdf_icon

SE4060GB N-Channel Enhancement-Mode MOSFET Revision A General Description Features Thigh Density Cell Design For Ultra Low For a single MOSFET On-Resistance Fully Characterized Avalanche V =45V DS Voltage and Current Improved Shoot-Through R =7.5m @V =10V DS(ON) GS FOM Simple Drive Requirement Small Package Outline Surface Mount Device Pin configurations ... See More ⇒

Detailed specifications: SE3205A, SE3401B, SE3N150P, SE40120A, SE40150, SE40160A, SE4020B, SE40300GTS, IRFZ44, SE6080S, SE8090S, SE4060GB, SE40P20B, SE4435, SE4606, SE4606L, SE4606S