All MOSFET. SE40P20B Datasheet

 

SE40P20B Datasheet and Replacement


   Type Designator: SE40P20B
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 80 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 370 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
   Package: TO252
 

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SE40P20B Datasheet (PDF)

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SE40P20B

SE40P20BP-Channel MOSFETRevision: AGeneral Description FeaturesThis series is a high voltage power MOSFET For a single MOSFETand is designed to have better characteristics, V =-40VDSsuch as fast switching time, low gate charge, R =26m @V =-10VDS(ON) GSlow on-state resistance and have a highrugged avalanche characteristicsPin configurationsSee Diagram below

Datasheet: SE40150 , SE40160A , SE4020B , SE40300GTS , SE4060 , SE6080S , SE8090S , SE4060GB , IRF640N , SE4435 , SE4606 , SE4606L , SE4606S , SE4607 , SE4610 , SE4625 , SE47NS65TS .

History: 2SK2152 | SIHFD210 | TPA73R300M | 19N10G-TQ2-T | JCS7N95FA | LPSA3487 | RJK0406JPE

Keywords - SE40P20B MOSFET datasheet

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