All MOSFET. SE4610 Datasheet

 

SE4610 Datasheet and Replacement


   Type Designator: SE4610
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4.1 nS
   Cossⓘ - Output Capacitance: 102 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.033 Ohm
   Package: SOP8
 

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SE4610 Datasheet (PDF)

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SE4610

SE4610Complementary Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesAdvanced trench technology to provide For N-Channel MOSFETexcellent RDS(ON), low gate charge and low V =25VDSoperation voltage. This device is suitable for using R =18m @V =4.5VDS(ON) GSas a load switch or in PWM applications. Low R For P-Channel MOSFETDS(on) Small Packag

Datasheet: SE8090S , SE4060GB , SE40P20B , SE4435 , SE4606 , SE4606L , SE4606S , SE4607 , 10N60 , SE4625 , SE47NS65TS , SE4942B , SE4946 , SE4953 , SE4N65 , SE540A , SE6003C .

History: SI2301ADS-T1 | BRU24N50 | IRFL110TR | SI2301CDS-T1 | SWB056R68E7T

Keywords - SE4610 MOSFET datasheet

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