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SE4610 Specs and Replacement

Type Designator: SE4610

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4.1 nS

Cossⓘ - Output Capacitance: 102 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.033 Ohm

Package: SOP8

SE4610 substitution

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SE4610 datasheet

 ..1. Size:712K  cn sino-ic
 se4610.pdf pdf_icon

SE4610

SE4610 Complementary Enhancement-Mode MOSFET Revision A General Description Features Advanced trench technology to provide For N-Channel MOSFET excellent RDS(ON), low gate charge and low V =25V DS operation voltage. This device is suitable for using R =18m @V =4.5V DS(ON) GS as a load switch or in PWM applications. Low R For P-Channel MOSFET DS(on) Small Packag... See More ⇒

Detailed specifications: SE8090S, SE4060GB, SE40P20B, SE4435, SE4606, SE4606L, SE4606S, SE4607, 10N60, SE4625, SE47NS65TS, SE4942B, SE4946, SE4953, SE4N65, SE540A, SE6003C

Keywords - SE4610 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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