SE4610 MOSFET. Datasheet pdf. Equivalent
Type Designator: SE4610
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pdⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 10 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 13.8 nC
trⓘ - Rise Time: 4.1 nS
Cossⓘ - Output Capacitance: 102 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.033 Ohm
Package: SOP8
SE4610 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SE4610 Datasheet (PDF)
se4610.pdf
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SE4610Complementary Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesAdvanced trench technology to provide For N-Channel MOSFETexcellent RDS(ON), low gate charge and low V =25VDSoperation voltage. This device is suitable for using R =18m @V =4.5VDS(ON) GSas a load switch or in PWM applications. Low R For P-Channel MOSFETDS(on) Small Packag
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
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