All MOSFET. SE4610 Datasheet

 

SE4610 Datasheet and Replacement


   Type Designator: SE4610
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id|ⓘ - Maximum Drain Current: 10 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 4.1 nS
   Cossⓘ - Output Capacitance: 102 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.033 Ohm
   Package: SOP8
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SE4610 Datasheet (PDF)

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SE4610

SE4610Complementary Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesAdvanced trench technology to provide For N-Channel MOSFETexcellent RDS(ON), low gate charge and low V =25VDSoperation voltage. This device is suitable for using R =18m @V =4.5VDS(ON) GSas a load switch or in PWM applications. Low R For P-Channel MOSFETDS(on) Small Packag

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: WMK25N80M3 | MTC2804Q8

Keywords - SE4610 MOSFET datasheet

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