All MOSFET. SE47NS65TS Datasheet

 

SE47NS65TS Datasheet and Replacement


   Type Designator: SE47NS65TS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 391 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 47 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 215 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
   Package: TO247S
 

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SE47NS65TS Datasheet (PDF)

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SE47NS65TS

SE47NS65TSN-Channel Enhancement-Mode COOLMOSFETRevision: AGeneral Description FeaturesThigh Density Cell Design For Ultra Low For a single MOSFETOn-Resistance Fully Characterized Avalanche V =650VDSVoltage and Current Improved Shoot-Through R =60m @V =10VDS(ON) GSFOM Simple Drive Requirement Small Package Outline Surface Mount DevicePin configurat

Datasheet: SE40P20B , SE4435 , SE4606 , SE4606L , SE4606S , SE4607 , SE4610 , SE4625 , IRFP250N , SE4942B , SE4946 , SE4953 , SE4N65 , SE540A , SE6003C , SE60120B , SE60120GTS .

Keywords - SE47NS65TS MOSFET datasheet

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