SE47NS65TS Datasheet and Replacement
Type Designator: SE47NS65TS
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 391 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 47 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 215 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
Package: TO247S
SE47NS65TS substitution
SE47NS65TS Datasheet (PDF)
se47ns65ts.pdf

SE47NS65TSN-Channel Enhancement-Mode COOLMOSFETRevision: AGeneral Description FeaturesThigh Density Cell Design For Ultra Low For a single MOSFETOn-Resistance Fully Characterized Avalanche V =650VDSVoltage and Current Improved Shoot-Through R =60m @V =10VDS(ON) GSFOM Simple Drive Requirement Small Package Outline Surface Mount DevicePin configurat
Datasheet: SE40P20B , SE4435 , SE4606 , SE4606L , SE4606S , SE4607 , SE4610 , SE4625 , IRFP250N , SE4942B , SE4946 , SE4953 , SE4N65 , SE540A , SE6003C , SE60120B , SE60120GTS .
History: RT3J55M | TSA28N50M | IRFP440R | CS12N65FA9R | QS8M51 | MME70R380PRH | 25N10L-TF3-T
Keywords - SE47NS65TS MOSFET datasheet
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History: RT3J55M | TSA28N50M | IRFP440R | CS12N65FA9R | QS8M51 | MME70R380PRH | 25N10L-TF3-T



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