SE47NS65TS Specs and Replacement
Type Designator: SE47NS65TS
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 391 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 47 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 215 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
Package: TO247S
SE47NS65TS substitution
- MOSFET ⓘ Cross-Reference Search
SE47NS65TS datasheet
se47ns65ts.pdf
SE47NS65TS N-Channel Enhancement-Mode COOLMOSFET Revision A General Description Features Thigh Density Cell Design For Ultra Low For a single MOSFET On-Resistance Fully Characterized Avalanche V =650V DS Voltage and Current Improved Shoot-Through R =60m @V =10V DS(ON) GS FOM Simple Drive Requirement Small Package Outline Surface Mount Device Pin configurat... See More ⇒
Detailed specifications: SE40P20B, SE4435, SE4606, SE4606L, SE4606S, SE4607, SE4610, SE4625, IRFB4115, SE4942B, SE4946, SE4953, SE4N65, SE540A, SE6003C, SE60120B, SE60120GTS
Keywords - SE47NS65TS MOSFET specs
SE47NS65TS cross reference
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SE47NS65TS substitution
SE47NS65TS replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: UPA1774 | WMS04N10TS | UPA1793 | JMPL1050PK | JMPL1050AU | DMP32D5LFA | IRLF120
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