All MOSFET. SE60120B Datasheet

 

SE60120B MOSFET. Datasheet pdf. Equivalent


   Type Designator: SE60120B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 200 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 120 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 125 nC
   trⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 470 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
   Package: TO252

 SE60120B Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SE60120B Datasheet (PDF)

 ..1. Size:509K  cn sino-ic
 se60120b.pdf

SE60120B SE60120B

Dec 2014SE60120BN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThis type used advanced trench technology and For a single MOSFETdesign to provide excellent R with low gateDS(ON) V =60VDScharge. R =4.1m @V =10VDS(ON) GS High density cell design for ultra low RDS(ON) Excellent package for good heat dissipationPin configuration

 7.1. Size:704K  cn sino-ic
 se60120gts.pdf

SE60120B SE60120B

Dec 2014SE60120GTSN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThis type used advanced trench technology and For a single MOSFETdesign to provide excellent R with low gateDS(ON) V = 60VDScharge. R = 3.0m @ V =10VDS(ON) GS High density cell design for ultra low RDS(ON) Excellent package for good heat dissipationPin configura

 9.1. Size:461K  cn sino-ic
 se6016b.pdf

SE60120B SE60120B

SE6016BN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThigh Density Cell Design For Ultra Low For a single MOSFETOn-Resistance Fully Characterized Avalanche V =60VDSVoltage and Current Improved Shoot-Through R =23m @V =10VDS(ON) GSFOM Simple Drive Requirement Small Package Outline Surface Mount DevicePin configurationsSe

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