All MOSFET. SE60P20B Datasheet

 

SE60P20B Datasheet and Replacement


   Type Designator: SE60P20B
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 120 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 99 nS
   Cossⓘ - Output Capacitance: 1250 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.033 Ohm
   Package: TO252
 

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SE60P20B Datasheet (PDF)

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SE60P20B

SE60P20BP-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThigh Density Cell Design For Ultra Low For a single MOSFETOn-Resistance Fully Characterized Avalanche V =-60VDSVoltage and Current Improved Shoot-Through R =26m @V =-10VDS(ON) GSFOM Simple Drive Requirement Small Package Outline Surface Mount DevicePin configurations

Datasheet: SE60120GTS , SE6016B , SE6020B , SE6020DB , SE60210GA , SE60300G , SE6050B , SE6080A , SPP20N60C3 , SE630K , SE6880A , SE720 , SE7314 , SE7401P , SE7401U , SE80100GA , SE80130G .

History: PMV40UN2 | HGN090N06SL | APT6011B2VFRG | SLF70R420S2 | NTMFS0D55N03CG | 5N65KG-TMS-T | VBM17R10

Keywords - SE60P20B MOSFET datasheet

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