SE60P20B Specs and Replacement
Type Designator: SE60P20B
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 120 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 99 nS
Cossⓘ - Output Capacitance: 1250 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.033 Ohm
Package: TO252
SE60P20B substitution
- MOSFET ⓘ Cross-Reference Search
SE60P20B datasheet
se60p20b.pdf
SE60P20B P-Channel Enhancement-Mode MOSFET Revision A General Description Features Thigh Density Cell Design For Ultra Low For a single MOSFET On-Resistance Fully Characterized Avalanche V =-60V DS Voltage and Current Improved Shoot-Through R =26m @V =-10V DS(ON) GS FOM Simple Drive Requirement Small Package Outline Surface Mount Device Pin configurations ... See More ⇒
Detailed specifications: SE60120GTS, SE6016B, SE6020B, SE6020DB, SE60210GA, SE60300G, SE6050B, SE6080A, K3569, SE630K, SE6880A, SE720, SE7314, SE7401P, SE7401U, SE80100GA, SE80130G
Keywords - SE60P20B MOSFET specs
SE60P20B cross reference
SE60P20B equivalent finder
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SE60P20B substitution
SE60P20B replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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