SE6880A Datasheet and Replacement
Type Designator: SE6880A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 70 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 310 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
Package: TO220
SE6880A substitution
SE6880A Datasheet (PDF)
se6880a.pdf

SE6880AN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesFor a single MOSFETAdvanced trench technology to provideexcellent RDS(ON), low gate charge and low V =70VDSoperation voltage. This device is suitable for R =6.3m @V =10VDS(ON) GSusing as a load switch or in PWMapplications. Simple Drive Requirement Small Package Outline
se6880.pdf

Oct 2014 SE6880 N-Channel Enhancement-Mode MOSFET Revision: A General Description Features This type used advanced trench technology and For a single MOSFET design to provide excellent RDS(ON) with low gate VDS = 68V charge. RDS(ON) = 7m @ VGS=10V High density cell design for ultra low R DS(ON) Excellent package for good heat dissipation Pin configurations See
se6880.pdf

Oct 2014 SE6880 N-Channel Enhancement-Mode MOSFET Revision: A General Description Features This type used advanced trench technology and For a single MOSFET design to provide excellent RDS(ON) with low gate VDS = 68V charge. RDS(ON) = 7m @ VGS=10V High density cell design for ultra low R DS(ON) Excellent package for good heat dissipation Pin configurations See
Datasheet: SE6020B , SE6020DB , SE60210GA , SE60300G , SE6050B , SE6080A , SE60P20B , SE630K , 2SK3568 , SE720 , SE7314 , SE7401P , SE7401U , SE80100GA , SE80130G , SE80130GA , SE80160G .
History: TSM75N75CZ | AP4543GEH-HF | PDN2309S | NCE60N1K0I
Keywords - SE6880A MOSFET datasheet
SE6880A cross reference
SE6880A equivalent finder
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History: TSM75N75CZ | AP4543GEH-HF | PDN2309S | NCE60N1K0I



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