SE6880A MOSFET Datasheet: N-Ch, 70V, 80A. Full specification with pinout and replacement list

SE6880A Specs and Replacement

Type Designator: SE6880A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 70 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 310 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm

Package: TO220

SE6880A substitution

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SE6880A datasheet

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SE6880A N-Channel Enhancement-Mode MOSFET Revision A General Description Features For a single MOSFET Advanced trench technology to provide excellent RDS(ON), low gate charge and low V =70V DS operation voltage. This device is suitable for R =6.3m @V =10V DS(ON) GS using as a load switch or in PWM applications. Simple Drive Requirement Small Package Outline ... See More ⇒

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Oct 2014 SE6880 N-Channel Enhancement-Mode MOSFET Revision A General Description Features This type used advanced trench technology and For a single MOSFET design to provide excellent RDS(ON) with low gate VDS = 68V charge. RDS(ON) = 7m @ VGS=10V High density cell design for ultra low R DS(ON) Excellent package for good heat dissipation Pin configurations See ... See More ⇒

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