All MOSFET. SE6880A Datasheet

 

SE6880A Datasheet and Replacement


   Type Designator: SE6880A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 70 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 310 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: TO220
 

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SE6880A Datasheet (PDF)

 ..1. Size:392K  cn sino-ic
 se6880a.pdf pdf_icon

SE6880A

SE6880AN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesFor a single MOSFETAdvanced trench technology to provideexcellent RDS(ON), low gate charge and low V =70VDSoperation voltage. This device is suitable for R =6.3m @V =10VDS(ON) GSusing as a load switch or in PWMapplications. Simple Drive Requirement Small Package Outline

 8.1. Size:752K  china
 se6880.pdf pdf_icon

SE6880A

Oct 2014 SE6880 N-Channel Enhancement-Mode MOSFET Revision: A General Description Features This type used advanced trench technology and For a single MOSFET design to provide excellent RDS(ON) with low gate VDS = 68V charge. RDS(ON) = 7m @ VGS=10V High density cell design for ultra low R DS(ON) Excellent package for good heat dissipation Pin configurations See

 8.2. Size:752K  cn sino-ic
 se6880.pdf pdf_icon

SE6880A

Oct 2014 SE6880 N-Channel Enhancement-Mode MOSFET Revision: A General Description Features This type used advanced trench technology and For a single MOSFET design to provide excellent RDS(ON) with low gate VDS = 68V charge. RDS(ON) = 7m @ VGS=10V High density cell design for ultra low R DS(ON) Excellent package for good heat dissipation Pin configurations See

Datasheet: SE6020B , SE6020DB , SE60210GA , SE60300G , SE6050B , SE6080A , SE60P20B , SE630K , 2SK3568 , SE720 , SE7314 , SE7401P , SE7401U , SE80100GA , SE80130G , SE80130GA , SE80160G .

History: PMN25EN | SI7192DP | NP82N04NUG | IXTH60N15 | FCH023N65S3 | 2P979V | 2SK3501-01

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