SE6880A MOSFET. Datasheet pdf. Equivalent
Type Designator: SE6880A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 70 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
|Id|ⓘ - Maximum Drain Current: 80 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 94 nC
trⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 310 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
Package: TO220
SE6880A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SE6880A Datasheet (PDF)
se6880a.pdf
SE6880AN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesFor a single MOSFETAdvanced trench technology to provideexcellent RDS(ON), low gate charge and low V =70VDSoperation voltage. This device is suitable for R =6.3m @V =10VDS(ON) GSusing as a load switch or in PWMapplications. Simple Drive Requirement Small Package Outline
se6880.pdf
Oct 2014 SE6880 N-Channel Enhancement-Mode MOSFET Revision: A General Description Features This type used advanced trench technology and For a single MOSFET design to provide excellent RDS(ON) with low gate VDS = 68V charge. RDS(ON) = 7m @ VGS=10V High density cell design for ultra low R DS(ON) Excellent package for good heat dissipation Pin configurations See
se6880.pdf
Oct 2014 SE6880 N-Channel Enhancement-Mode MOSFET Revision: A General Description Features This type used advanced trench technology and For a single MOSFET design to provide excellent RDS(ON) with low gate VDS = 68V charge. RDS(ON) = 7m @ VGS=10V High density cell design for ultra low R DS(ON) Excellent package for good heat dissipation Pin configurations See
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
