SE80130G Specs and Replacement
Type Designator: SE80130G
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 160 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 130 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 12.5 nS
Cossⓘ - Output Capacitance: 830 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0043 Ohm
SE80130G substitution
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SE80130G datasheet
kse800 kse801 kse802 kse803.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
se80100ga.pdf
SE80100GA N-Channel Enhancement-Mode MOSFET Revision A General Description Features Thigh Density Cell Design For Ultra Low For a single MOSFET On-Resistance Fully Characterized Avalanche V =80V DS Voltage and Current Improved Shoot-Through R =6.0m @V =10 DS(ON) GS FOM Simple Drive Requirement Small Package Outline Surface Mount Device Pin configurations ... See More ⇒
Detailed specifications: SE60P20B, SE630K, SE6880A, SE720, SE7314, SE7401P, SE7401U, SE80100GA, 12N60, SE80130GA, SE80160G, SE80250G, SE8090A, SE8090G, SE8205A, SE8209, SE85130GA
Keywords - SE80130G MOSFET specs
SE80130G cross reference
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