SE80130G PDF and Equivalents Search

 

SE80130G Specs and Replacement

Type Designator: SE80130G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 160 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 130 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12.5 nS

Cossⓘ - Output Capacitance: 830 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0043 Ohm

Package: TO220 TO263

SE80130G substitution

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SE80130G datasheet

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SE80130G

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SE80130G

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SE80130G

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

 9.2. Size:420K  cn sino-ic
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SE80130G

SE80100GA N-Channel Enhancement-Mode MOSFET Revision A General Description Features Thigh Density Cell Design For Ultra Low For a single MOSFET On-Resistance Fully Characterized Avalanche V =80V DS Voltage and Current Improved Shoot-Through R =6.0m @V =10 DS(ON) GS FOM Simple Drive Requirement Small Package Outline Surface Mount Device Pin configurations ... See More ⇒

Detailed specifications: SE60P20B, SE630K, SE6880A, SE720, SE7314, SE7401P, SE7401U, SE80100GA, 12N60, SE80130GA, SE80160G, SE80250G, SE8090A, SE8090G, SE8205A, SE8209, SE85130GA

Keywords - SE80130G MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 

 

 

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