Справочник MOSFET. SE80130G

 

SE80130G MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SE80130G
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 160 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 80 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 130 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 12.5 ns
   Cossⓘ - Выходная емкость: 830 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0043 Ohm
   Тип корпуса: TO220 TO263

 Аналог (замена) для SE80130G

 

 

SE80130G Datasheet (PDF)

 ..1. Size:536K  cn sino-ic
 se80130g.pdf

SE80130G SE80130G

SE80130GN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesFor a single MOSFETAdvanced trench technology to provideexcellent RDS(ON), low gate charge and low V =80VDSoperation voltage. This device is suitable for R =3.6m @V =10VDS(ON) GSusing as a load switch or in PWMapplications. Simple Drive Requirement Small Package Outline

 0.1. Size:471K  cn sino-ic
 se80130ga.pdf

SE80130G SE80130G

SE80130GAN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesFor a single MOSFETAdvanced trench technology to provideexcellent RDS(ON), low gate charge and low V =80VDSoperation voltage. This device is suitable for R =3.6m @V =10VDS(ON) GSusing as a load switch or in PWMapplications. Simple Drive Requirement Small Package Outline

 9.1. Size:169K  onsemi
 kse800 kse801 kse802 kse803.pdf

SE80130G SE80130G

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.2. Size:420K  cn sino-ic
 se80100ga.pdf

SE80130G SE80130G

SE80100GAN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThigh Density Cell Design For Ultra Low For a single MOSFETOn-Resistance Fully Characterized Avalanche V =80VDSVoltage and Current Improved Shoot-Through R =6.0m @V =10DS(ON) GSFOM Simple Drive Requirement Small Package Outline Surface Mount DevicePin configurations

 9.3. Size:423K  cn sino-ic
 se80160g.pdf

SE80130G SE80130G

SE80160GN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesFor a single MOSFETAdvanced trench technology to provideexcellent RDS(ON), low gate charge and low V =80VDSoperation voltage. This device is suitable for R =2.2m @V =10VDS(ON) GSusing as a load switch or in PWMapplications. Simple Drive Requirement Small Package Outline

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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