All MOSFET. SE80130GA Datasheet

 

SE80130GA MOSFET. Datasheet pdf. Equivalent


   Type Designator: SE80130GA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 160 W
   Maximum Drain-Source Voltage |Vds|: 80 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V
   Maximum Drain Current |Id|: 130 A
   Maximum Junction Temperature (Tj): 175 °C
   Total Gate Charge (Qg): 55 nC
   Rise Time (tr): 12.5 nS
   Drain-Source Capacitance (Cd): 830 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.0043 Ohm
   Package: TO220

 SE80130GA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SE80130GA Datasheet (PDF)

 ..1. Size:471K  cn sino-ic
 se80130ga.pdf

SE80130GA SE80130GA

SE80130GAN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesFor a single MOSFETAdvanced trench technology to provideexcellent RDS(ON), low gate charge and low V =80VDSoperation voltage. This device is suitable for R =3.6m @V =10VDS(ON) GSusing as a load switch or in PWMapplications. Simple Drive Requirement Small Package Outline

 6.1. Size:536K  cn sino-ic
 se80130g.pdf

SE80130GA SE80130GA

SE80130GN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesFor a single MOSFETAdvanced trench technology to provideexcellent RDS(ON), low gate charge and low V =80VDSoperation voltage. This device is suitable for R =3.6m @V =10VDS(ON) GSusing as a load switch or in PWMapplications. Simple Drive Requirement Small Package Outline

 9.1. Size:169K  onsemi
 kse800 kse801 kse802 kse803.pdf

SE80130GA SE80130GA

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.2. Size:420K  cn sino-ic
 se80100ga.pdf

SE80130GA SE80130GA

SE80100GAN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThigh Density Cell Design For Ultra Low For a single MOSFETOn-Resistance Fully Characterized Avalanche V =80VDSVoltage and Current Improved Shoot-Through R =6.0m @V =10DS(ON) GSFOM Simple Drive Requirement Small Package Outline Surface Mount DevicePin configurations

 9.3. Size:423K  cn sino-ic
 se80160g.pdf

SE80130GA SE80130GA

SE80160GN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesFor a single MOSFETAdvanced trench technology to provideexcellent RDS(ON), low gate charge and low V =80VDSoperation voltage. This device is suitable for R =2.2m @V =10VDS(ON) GSusing as a load switch or in PWMapplications. Simple Drive Requirement Small Package Outline

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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