SED8830 Datasheet and Replacement
Type Designator: SED8830
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 62 nS
Cossⓘ - Output Capacitance: 189 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0145 Ohm
Package: DFN2X5
SED8830 substitution
SED8830 Datasheet (PDF)
se8830t se8830a sed8830mp sed8830 sed8830p sed8830n.pdf

SHANGHAI Feb 2013 MICROELECTRONICS CO., LTD. SE8830T/8830A SED8830MP/8830/8830P/SED8830N Dual N-Channel Enhancement Mode Field Effect Transistor Revision:A 8830 Series Pin Assignment Features For a single mosfet VDSS = 20 V RDS(ON)
sed8830a.pdf

SHANGHAI Feb 2010MICROELECTRONICS CO., LTD.SED8830ADual N-Channel Enhancement Mode Field Effect TransistorRevision:AFeaturesFor a single mosfet VDSS =20V RDS(ON)=14.5m@VGS=4.5V RDS(ON)=22m@VGS=2.5VApplicationsBattery protectionLoad switchPower managementConstructionSilicon epitaxial planerAbsolute Maximum RatingsParamet Symbol Rating
sed8840.pdf

Jul 2014SED8840Dual N-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThigh Density Cell Design For Ultra Low For a single MOSFETOn-Resistance Fully Characterized Avalanche V =20VDSVoltage and Current Improved Shoot-Through R =8.5m @V =4.5VDS(ON) GSFOM Simple Drive Requirement Small Package Outline Surface Mount DevicePin c
Datasheet: SE8209 , SE85130GA , SE85210 , SE8810 , SE8810A , SE8830T , SE8830A , SED8830MP , STF13NM60N , SED8830P , SED8830N , SE8831A , SE8841A , SE8N65A , SE9435 , SE9926 , SED10070GG .
History: CJS2013 | PK6A6BA | MTN2N60FP | OSG70R350AF | PD504BA | OSG70R1KPF | NTMFS4847NT1G
Keywords - SED8830 MOSFET datasheet
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History: CJS2013 | PK6A6BA | MTN2N60FP | OSG70R350AF | PD504BA | OSG70R1KPF | NTMFS4847NT1G



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