All MOSFET. SED10080GG Datasheet

 

SED10080GG Datasheet and Replacement


   Type Designator: SED10080GG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 170 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 55 nS
   Cossⓘ - Output Capacitance: 320 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: DFN5X6
 

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SED10080GG Datasheet (PDF)

 ..1. Size:415K  cn sino-ic
 sed10080gg.pdf pdf_icon

SED10080GG

SED10080GGN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesFor a single MOSFETAdvanced trench technology to provideexcellent RDS(ON), low gate charge and low V =100VDSoperation voltage. This device is suitable for R =6.7m @V =10VDS(ON) GSusing as a load switch or in PWMapplications. Simple Drive Requirement Small Package Outline

 8.1. Size:415K  cn sino-ic
 sed10070gg.pdf pdf_icon

SED10080GG

SED10070GGN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesFor a single MOSFETAdvanced trench technology to provideexcellent RDS(ON), low gate charge and low V =100VDSoperation voltage. This device is suitable for R =8.2m @V =10VDS(ON) GSusing as a load switch or in PWMapplications. Simple Drive Requirement Small Package Outline

Datasheet: SED8830P , SED8830N , SE8831A , SE8841A , SE8N65A , SE9435 , SE9926 , SED10070GG , 2N60 , SED14N65G , SED2145 , SED3022M , SED3030M , SED3032G , SED3080M , SED3081M , SED30P30M .

History: SI4622DY | VBZL80N03

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