SED10080GG MOSFET Datasheet: N-Ch, 100V, 80A. Full specification with pinout and replacement list

SED10080GG Specs and Replacement

Type Designator: SED10080GG

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 170 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 55 nS

Cossⓘ - Output Capacitance: 320 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm

Package: DFN5X6

SED10080GG substitution

- MOSFET ⓘ Cross-Reference Search

SED10080GG datasheet

..1. Size:415K cn sino-ic
sed10080gg.pdf pdf_icon

SED10080GG N-Channel Enhancement-Mode MOSFET Revision A General Description Features For a single MOSFET Advanced trench technology to provide excellent RDS(ON), low gate charge and low V =100V DS operation voltage. This device is suitable for R =6.7m @V =10V DS(ON) GS using as a load switch or in PWM applications. Simple Drive Requirement Small Package Outline ... See More ⇒

8.1. Size:415K cn sino-ic
sed10070gg.pdf pdf_icon

SED10070GG N-Channel Enhancement-Mode MOSFET Revision A General Description Features For a single MOSFET Advanced trench technology to provide excellent RDS(ON), low gate charge and low V =100V DS operation voltage. This device is suitable for R =8.2m @V =10V DS(ON) GS using as a load switch or in PWM applications. Simple Drive Requirement Small Package Outline ... See More ⇒

Detailed specifications: SED8830P, SED8830N, SE8831A, SE8841A, SE8N65A, SE9435, SE9926, SED10070GG, 20N50, SED14N65G, SED2145, SED3022M, SED3030M, SED3032G, SED3080M, SED3081M, SED30P30M