All MOSFET. VS3522AE Datasheet

 

VS3522AE Datasheet and Replacement


   Type Designator: VS3522AE
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 29 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 27 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 140 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm
   Package: PDFN3333
 

 VS3522AE substitution

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VS3522AE Datasheet (PDF)

 ..1. Size:649K  cn vanguard
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VS3522AE

VS3522AE -30V/-27A P-Channel Advanced Power MOSFET V DS -30 V Features R DS(on),TYP@ VGS=-10 V 22 m P-Channel-5V Logic Level Control R DS(on),TYP@ VGS=-4.5V 39 m Low on-resistance RDS(on) @ VGS=-4.5 V I D -27 A Fast Switching Enhancement mode PDFN3333 Pb-free lead plating; RoHS compliant Part ID Package Type Marking Tape and reel informat

Datasheet: VS150N08BT , VS1606GS , VS2301BC , VS2522AL , VS2622AE , VS2N7002K , VS3508AE , VS3518AE , IRF540N , VS3540AC , VS3610AE , VS3618AE , VS3618BE , VS3620GPMC , VS3622AE , VS3622DE , VS3640DS .

History: STF2NK60Z | STN3P6F6 | VBE5638 | SPB21N50C3 | TPD50R250C | RJK0379DPA | IRFP23N50L

Keywords - VS3522AE MOSFET datasheet

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