All MOSFET. VS3522AE Datasheet

 

VS3522AE Datasheet and Replacement


   Type Designator: VS3522AE
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 29 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 27 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 140 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm
   Package: PDFN3333
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VS3522AE Datasheet (PDF)

 ..1. Size:649K  cn vanguard
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VS3522AE

VS3522AE -30V/-27A P-Channel Advanced Power MOSFET V DS -30 V Features R DS(on),TYP@ VGS=-10 V 22 m P-Channel-5V Logic Level Control R DS(on),TYP@ VGS=-4.5V 39 m Low on-resistance RDS(on) @ VGS=-4.5 V I D -27 A Fast Switching Enhancement mode PDFN3333 Pb-free lead plating; RoHS compliant Part ID Package Type Marking Tape and reel informat

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: IRF7455 | IRLR024 | CED05N8 | BUZ84 | IRL3715LPBF | AON6794 | BL10N70-A

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