VS3522AE Specs and Replacement
Type Designator: VS3522AE
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 29 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 27 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 140 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm
Package: PDFN3333
VS3522AE substitution
- MOSFET ⓘ Cross-Reference Search
VS3522AE datasheet
vs3522ae.pdf
VS3522AE -30V/-27A P-Channel Advanced Power MOSFET V DS -30 V Features R DS(on),TYP@ VGS=-10 V 22 m P-Channel -5V Logic Level Control R DS(on),TYP@ VGS=-4.5V 39 m Low on-resistance RDS(on) @ VGS=-4.5 V I D -27 A Fast Switching Enhancement mode PDFN3333 Pb-free lead plating; RoHS compliant Part ID Package Type Marking Tape and reel informat... See More ⇒
Detailed specifications: VS150N08BT, VS1606GS, VS2301BC, VS2522AL, VS2622AE, VS2N7002K, VS3508AE, VS3518AE, IRF540, VS3540AC, VS3610AE, VS3618AE, VS3618BE, VS3620GPMC, VS3622AE, VS3622DE, VS3640DS
Keywords - VS3522AE MOSFET specs
VS3522AE cross reference
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: VS3610AE | WSD30150DN56 | WSD3028DN | WMM040N08HGS | WSD3042DN56 | WSC60N03
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