All MOSFET. VS3522AE Datasheet

 

VS3522AE MOSFET. Datasheet pdf. Equivalent


   Type Designator: VS3522AE
   Marking Code: 3522AE
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 29 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
   |Id|ⓘ - Maximum Drain Current: 27 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 19 nC
   trⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 140 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm
   Package: PDFN3333

 VS3522AE Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

VS3522AE Datasheet (PDF)

 ..1. Size:649K  cn vanguard
 vs3522ae.pdf

VS3522AE VS3522AE

VS3522AE -30V/-27A P-Channel Advanced Power MOSFET V DS -30 V Features R DS(on),TYP@ VGS=-10 V 22 m P-Channel-5V Logic Level Control R DS(on),TYP@ VGS=-4.5V 39 m Low on-resistance RDS(on) @ VGS=-4.5 V I D -27 A Fast Switching Enhancement mode PDFN3333 Pb-free lead plating; RoHS compliant Part ID Package Type Marking Tape and reel informat

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: TPC6004

 

 
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