FCD5N60 MOSFET. Datasheet pdf. Equivalent
Type Designator: FCD5N60
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 54 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
Maximum Drain Current |Id|: 4.6 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 16 nC
Maximum Drain-Source On-State Resistance (Rds): 0.95 Ohm
Package: TO252, DPAK
FCD5N60 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FCD5N60 Datasheet (PDF)
0.1. fcd5n60 fcu5n60.pdf 
Size:973K _fairchild_semi
December 2008 TM SuperFET FCD5N60 / FCU5N60 600V N-Channel MOSFET Features Description • 650V @TJ = 150°C SuperFETTM is, Fairchild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge • Typ. Rds(on)=0.81Ω balance mechanism for outstanding low on-resistance and • Ultra low gate charge (typ. Qg=16nC) lower gate charge performanc
0.2. fcd5n60tm ws.pdf Size:938K _fairchild_semi
December 2008 TM SuperFET FCD5N60 / FCU5N60 600V N-Channel MOSFET Features Description • 650V @TJ = 150°C SuperFETTM is, Fairchild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge • Typ. Rds(on)=0.81Ω balance mechanism for outstanding low on-resistance and • Ultra low gate charge (typ. Qg=16nC) lower gate charge performanc
Datasheet: FCB20N60 , 2SK3057 , 2SK3469-01MR , FCB20N60F , FCB36N60N , 2SJ279 , FCD4N60 , IRFD9020 , IRFP450 , STU9916L , FCD7N60 , STU816S , FCD9N60NTM , STU802S , FCH22N60N , STU670S , FCH25N60N .
