VS3618BE
MOSFET. Datasheet pdf. Equivalent
Type Designator: VS3618BE
Marking Code: 3618BE
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 30
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4
V
|Id|ⓘ - Maximum Drain Current: 50
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 27
nC
trⓘ - Rise Time: 51
nS
Cossⓘ -
Output Capacitance: 970(max)
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.006
Ohm
Package:
PDFN3333
VS3618BE
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
VS3618BE
Datasheet (PDF)
..1. Size:2538K cn vanguard
vs3618be.pdf 
VS3618BE30V/30A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 5.2 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 7.8 m Fast Switching and High efficiencyI D(Silicon Limited) 50 A 100% Avalanche TestedI D(Package Limited) 30 APDFN3333Part ID Package Type Marking PackingVS3618BE PDFN3333 3618BE 5000PCS/ReelMaximum ratings, at TA =25
..2. Size:1141K cn vgsemi
vs3618be.pdf
VS3618BE30V/58A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 5.2 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 7.8 m Fast Switching and High efficiencyI D(Silicon Limited) 58 A 100% Avalanche TestedPDFN3333Part ID Package Type Marking PackingVS3618BE PDFN3333 3618BE 5000PCS/ReelMaximum ratings, at TA =25C, unless otherwise specifi
8.1. Size:609K cn vanguard
vs3618ae.pdf
VS3618AE 30V/50A N-Channel Advanced Power MOSFET V DS 30 V Features R DS(on),TYP@ VGS=10 V 6 m N-Channel5V Logic Level Control R DS(on),TYP@ VGS=4.5 V 9 m Enhancement mode I D 50 A Very low on-resistance RDS(on) @ VGS=4.5 V PDFN3333 Fast Switching 100% Avalanche test Pb-free lead plating; RoHS compliant Tape and reel Part ID Packag
8.2. Size:928K cn vgsemi
vs3618ae.pdf
VS3618AE30V/32A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 6.4 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 8.8 m Fast Switching and High efficiencyI D(Silicon Limited) 50 A 100% Avalanche testI D(Package Limited) 32 APDFN3333Part ID Package Type Marking PackingVS3618AE PDFN3333 3618AE 5000PCS/ReelMaximum ratings, at TA =25C,
8.3. Size:1032K cn vgsemi
vs3618ad.pdf
VS3618AD30V/70A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 5.8 m N-Channel5V Logic Level ControlR DS(on),TYP@ VGS=4.5 V 9 m Enhancement modeI D 70 A Very low on-resistance RDS(on) @ VGS=4.5 VTO-252 Fast Switching 100% Avalanche test Pb-free lead plating; RoHS compliantPart ID Package Type Marking PackingVS3618A
8.4. Size:999K cn vgsemi
vs3618as.pdf
VS3618AS30V/16A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 6.6 m N-Channel5V Logic Level ControlR DS(on),TYP@ VGS=4.5 V 9.6 m Enhancement modeI D 16 A Low on-resistance RDS(on) @ VGS=4.5 V 100% Avalanche testSOP8 Pb-free lead plating; RoHS compliantPart ID Package Type Marking PackingVS3618AS SOP8 3618AS 3000PCS/Ree
8.5. Size:1161K cn vgsemi
vs3618ah.pdf
VS3618AH30V/8A N-Channel Advanced Power MOSFETFeaturesV DS 30 VR DS(on),TYP@ VGS=10 V 9.5 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 13 m Fast SwitchingI D 8 A High EffectiveSOT23-6LPart ID Package Type Marking PackingVS3618AH SOT23-6L VS02 3000pcs/reelMaximum ratings, at TA =25C, unless otherwise specifiedSymbol Parameter Rating UnitV(BR)DSS Drain-
8.6. Size:1043K cn vgsemi
vs3618ap.pdf
VS3618AP30V/54A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 5.4 m N-Channel5V Logic Level ControlR DS(on),TYP@ VGS=4.5 V 8.4 m Enhancement modeI D 54 A Very low on-resistance RDS(on) @ VGS=4.5 VPDFN5x6 Fast Switching 100% Avalanche test Pb-free lead plating; RoHS compliantPart ID Package Type Marking PackingVS36
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