VS3618BE MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: VS3618BE
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 30 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 50 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 51 ns
Cossⓘ - Выходная емкость: 970(max) pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.006 Ohm
Тип корпуса: PDFN3333
VS3618BE Datasheet (PDF)
vs3618be.pdf
VS3618BE30V/30A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 5.2 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 7.8 m Fast Switching and High efficiencyI D(Silicon Limited) 50 A 100% Avalanche TestedI D(Package Limited) 30 APDFN3333Part ID Package Type Marking PackingVS3618BE PDFN3333 3618BE 5000PCS/ReelMaximum ratings, at TA =25
vs3618be.pdf
VS3618BE30V/58A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 5.2 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 7.8 m Fast Switching and High efficiencyI D(Silicon Limited) 58 A 100% Avalanche TestedPDFN3333Part ID Package Type Marking PackingVS3618BE PDFN3333 3618BE 5000PCS/ReelMaximum ratings, at TA =25C, unless otherwise specifi
vs3618ae.pdf
VS3618AE 30V/50A N-Channel Advanced Power MOSFET V DS 30 V Features R DS(on),TYP@ VGS=10 V 6 m N-Channel5V Logic Level Control R DS(on),TYP@ VGS=4.5 V 9 m Enhancement mode I D 50 A Very low on-resistance RDS(on) @ VGS=4.5 V PDFN3333 Fast Switching 100% Avalanche test Pb-free lead plating; RoHS compliant Tape and reel Part ID Packag
vs3618ae.pdf
VS3618AE30V/32A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 6.4 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 8.8 m Fast Switching and High efficiencyI D(Silicon Limited) 50 A 100% Avalanche testI D(Package Limited) 32 APDFN3333Part ID Package Type Marking PackingVS3618AE PDFN3333 3618AE 5000PCS/ReelMaximum ratings, at TA =25C,
vs3618ad.pdf
VS3618AD30V/70A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 5.8 m N-Channel5V Logic Level ControlR DS(on),TYP@ VGS=4.5 V 9 m Enhancement modeI D 70 A Very low on-resistance RDS(on) @ VGS=4.5 VTO-252 Fast Switching 100% Avalanche test Pb-free lead plating; RoHS compliantPart ID Package Type Marking PackingVS3618A
vs3618as.pdf
VS3618AS30V/16A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 6.6 m N-Channel5V Logic Level ControlR DS(on),TYP@ VGS=4.5 V 9.6 m Enhancement modeI D 16 A Low on-resistance RDS(on) @ VGS=4.5 V 100% Avalanche testSOP8 Pb-free lead plating; RoHS compliantPart ID Package Type Marking PackingVS3618AS SOP8 3618AS 3000PCS/Ree
vs3618ah.pdf
VS3618AH30V/8A N-Channel Advanced Power MOSFETFeaturesV DS 30 VR DS(on),TYP@ VGS=10 V 9.5 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 13 m Fast SwitchingI D 8 A High EffectiveSOT23-6LPart ID Package Type Marking PackingVS3618AH SOT23-6L VS02 3000pcs/reelMaximum ratings, at TA =25C, unless otherwise specifiedSymbol Parameter Rating UnitV(BR)DSS Drain-
vs3618ap.pdf
VS3618AP30V/54A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 5.4 m N-Channel5V Logic Level ControlR DS(on),TYP@ VGS=4.5 V 8.4 m Enhancement modeI D 54 A Very low on-resistance RDS(on) @ VGS=4.5 VPDFN5x6 Fast Switching 100% Avalanche test Pb-free lead plating; RoHS compliantPart ID Package Type Marking PackingVS36
Другие MOSFET... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918