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VS4N65CD Specs and Replacement

Type Designator: VS4N65CD

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 57 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7 nS

Cossⓘ - Output Capacitance: 45 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.9 Ohm

Package: TO252

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VS4N65CD datasheet

 ..1. Size:614K  cn vanguard
 vs4n65cd.pdf pdf_icon

VS4N65CD

VS4N65CD 650V/4A N-Channel Advanced Power MOSFET V DS 650 V Features R DS(on),TYP@ VGS=10 V 2.3 Enhancement mode I D 4 A Low on-resistance RDS(on) @ VGS=10 V TO-252 Fast Switching Pb-free lead plating; RoHS compliant Tape and reel Part ID Package Type Marking information VS4N65CD TO-252 4N65CD 2500pcs/Reel Maximum ratings, at TA =25 C, unle... See More ⇒

Detailed specifications: VS4020AP, VS4020AS, VS4080AI, VS4410AT, VS4518AD, VS4602AP, VS4604AP, VS4618AE, 8205A, VS5810AS, VS5814DS, VS6016HS-A, VS6018AS, VS6018BS, VS6038AD, VS6412AE, VS6412ASL

Keywords - VS4N65CD MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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