All MOSFET. VS4N65CD Datasheet

 

VS4N65CD Datasheet and Replacement


   Type Designator: VS4N65CD
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 57 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 45 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.9 Ohm
   Package: TO252
 

 VS4N65CD substitution

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VS4N65CD Datasheet (PDF)

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VS4N65CD

VS4N65CD 650V/4A N-Channel Advanced Power MOSFET V DS 650 V Features R DS(on),TYP@ VGS=10 V 2.3 Enhancement mode I D 4 A Low on-resistance RDS(on) @ VGS=10 V TO-252 Fast Switching Pb-free lead plating; RoHS compliant Tape and reel Part ID Package Type Marking information VS4N65CD TO-252 4N65CD 2500pcs/Reel Maximum ratings, at TA =25C, unle

Datasheet: VS4020AP , VS4020AS , VS4080AI , VS4410AT , VS4518AD , VS4602AP , VS4604AP , VS4618AE , 2SK3878 , VS5810AS , VS5814DS , VS6016HS-A , VS6018AS , VS6018BS , VS6038AD , VS6412AE , VS6412ASL .

History: FKV550N | BRCS120P012MC | 14N50G-TF1-T | VS150N08BT | CEN2321A | IXFT23N80Q | 14N50L-TA3-T

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