VS5810AS MOSFET. Datasheet pdf. Equivalent
Type Designator: VS5810AS
Marking Code: 5810AS
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 15 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 33 nC
trⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 155 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
Package: SOP8
VS5810AS Transistor Equivalent Substitute - MOSFET Cross-Reference Search
VS5810AS Datasheet (PDF)
vs5810as.pdf
VS5810AS 55V/15A N-Channel Advanced Power MOSFET V DS 55 V Features R DS(on),TYP@ VGS=10 V 6.8 m N-Channel5V Logic Level Control R DS(on),TYP@ VGS=4.5 V 9.5 m Enhancement mode I D 15 A Very low on-resistance RDS(on) @ VGS=4.5 V VitoMOS Technology SOP8 100% Avalanche test Pb-free lead plating; RoHS compliant Tape and reel Part I
vs5814ds.pdf
VS5814DS 55V/9A Dual N-Channel Advanced Power MOSFET Features V DS 55 V R DS(on),TYP@ VGS=10 V 16 m Dual N-Channel5V Logic Level Control R DS(on),TYP@ VGS=4.5 V 22 m Enhancement mode I D 9 A Low on-resistance RDS(on) @ VGS=4.5 V VitoMOS Technology SOP8 Fast Switching and High efficiency Pb-free lead plating; RoHS compliant Tape an
vs5814ds.pdf
VS5814DS55V/9A Dual N-Channel Advanced Power MOSFETFeaturesV DS 55 VR DS(on),TYP@ VGS=10 V 16 m Dual N-Channel5V Logic Level ControlR DS(on),TYP@ VGS=4.5 V 22 m Enhancement modeI D 9 A Low on-resistance RDS(on) @ VGS=4.5 V VitoMOS TechnologySOP8 Fast Switching and High efficiency Pb-free lead plating; RoHS compliantPart ID Package Type Ma
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: NCE6005AN | FQB17N08TM
History: NCE6005AN | FQB17N08TM
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