VS6018AS MOSFET. Datasheet pdf. Equivalent
Type Designator: VS6018AS
Marking Code: 6018AS
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 18 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 82 nC
trⓘ - Rise Time: 125 nS
Cossⓘ - Output Capacitance: 295 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
Package: SOP8
VS6018AS Transistor Equivalent Substitute - MOSFET Cross-Reference Search
VS6018AS Datasheet (PDF)
vs6018as.pdf
VS6018AS 60V/18A N-Channel Advanced Power MOSFET V DS 60 V Features R DS(on),TYP@ VGS=10 V 7.0 m N-Channel5V Logic Level Control R DS(on),TYP@ VGS=4.5V 8.0 m Enhancement mode I D 18 A Very low on-resistance RDS(on) @ VGS=4.5 V Fast Switching SOP8 100% Avalanche test Pb-free lead plating; RoHS compliant Part ID Package Type Marking Ta
vs6018bs.pdf
VS6018BS 65V/17A N-Channel Advanced Power MOSFET V DS 65 V Features R DS(on),TYP@ VGS=10 V 6.7 m N-Channel5V Logic Level Control R DS(on),TYP@ VGS=4.5 V 7.9 m Enhancement mode I D 17 A Low on-resistance RDS(on) @ VGS=4.5 V 100% Avalanche test SOP8 Pb-free lead plating; RoHS compliant Tape and reel Part ID Package Type Marking informati
vs6016hs-a.pdf
VS6016HS-A 60V/12A N-Channel Advanced Power MOSFET V DS 60 V Features R DS(on),TYP@ VGS=10 V 11 m Enhancement mode R DS(on),TYP@ VGS=4.5 V 12 m Low on-resistance RDS(on) @ VGS=4.5 V I D 12 A Fast Switching and High efficiency Pb-free lead plating; RoHS compliant; Halogen free SOP8 Tape and reel Part ID Package Type Marking information VS6016H
Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , 7N60 , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .
