VS6018BS Specs and Replacement
Type Designator: VS6018BS
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 65 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 17 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 6.2 nS
Cossⓘ - Output Capacitance: 260 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
Package: SOP8
VS6018BS substitution
- MOSFET ⓘ Cross-Reference Search
VS6018BS datasheet
vs6018bs.pdf
VS6018BS 65V/17A N-Channel Advanced Power MOSFET V DS 65 V Features R DS(on),TYP@ VGS=10 V 6.7 m N-Channel 5V Logic Level Control R DS(on),TYP@ VGS=4.5 V 7.9 m Enhancement mode I D 17 A Low on-resistance RDS(on) @ VGS=4.5 V 100% Avalanche test SOP8 Pb-free lead plating; RoHS compliant Tape and reel Part ID Package Type Marking informati... See More ⇒
vs6018as.pdf
VS6018AS 60V/18A N-Channel Advanced Power MOSFET V DS 60 V Features R DS(on),TYP@ VGS=10 V 7.0 m N-Channel 5V Logic Level Control R DS(on),TYP@ VGS=4.5V 8.0 m Enhancement mode I D 18 A Very low on-resistance RDS(on) @ VGS=4.5 V Fast Switching SOP8 100% Avalanche test Pb-free lead plating; RoHS compliant Part ID Package Type Marking Ta... See More ⇒
vs6016hs-a.pdf
VS6016HS-A 60V/12A N-Channel Advanced Power MOSFET V DS 60 V Features R DS(on),TYP@ VGS=10 V 11 m Enhancement mode R DS(on),TYP@ VGS=4.5 V 12 m Low on-resistance RDS(on) @ VGS=4.5 V I D 12 A Fast Switching and High efficiency Pb-free lead plating; RoHS compliant; Halogen free SOP8 Tape and reel Part ID Package Type Marking information VS6016H... See More ⇒
Detailed specifications: VS4602AP, VS4604AP, VS4618AE, VS4N65CD, VS5810AS, VS5814DS, VS6016HS-A, VS6018AS, AON7408, VS6038AD, VS6412AE, VS6412ASL, VS6614GS, VS6640AC, VS6808DH, VS6880AT, VS7N65AD
Keywords - VS6018BS MOSFET specs
VS6018BS cross reference
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VS6018BS replacement
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