All MOSFET. VS6412AE Datasheet

 

VS6412AE Datasheet and Replacement


   Type Designator: VS6412AE
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 32 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 65 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 30 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8.5 nS
   Cossⓘ - Output Capacitance: 95 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
   Package: PDFN3333
 

 VS6412AE substitution

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VS6412AE Datasheet (PDF)

 ..1. Size:644K  cn vanguard
 vs6412ae.pdf pdf_icon

VS6412AE

VS6412AE 65V/30A N-Channel Advanced Power MOSFET V DS 65 V Features R DS(on),TYP@ VGS=10 V 19 m N-Channel5V Logic Level Control R DS(on),TYP@ VGS=4.5 V 22 m Enhancement mode I D 30 A Very low on-resistance RDS(on) @ VGS=4.5 V VitoMOS Technology PDFN3333 100% Avalanche test Pb-free lead plating; RoHS compliant Tape and reel Part I

 7.1. Size:793K  cn vanguard
 vs6412asl.pdf pdf_icon

VS6412AE

VS6412ASL 60V/10A N-Channel Advanced Power MOSFET V DS 60 V Features R DS(on),TYP@ VGS=10 V 14.5 m N-Channel5V Logic Level Control R DS(on),TYP@ VGS=4.5 V 16.0 m Enhancement mode I D 10 A Very low on-resistance RDS(on) @ VGS=4.5 V VitoMOS Technology SOP8 100% Avalanche test Pb-free lead plating; RoHS compliant Tape and reel Part

Datasheet: VS4618AE , VS4N65CD , VS5810AS , VS5814DS , VS6016HS-A , VS6018AS , VS6018BS , VS6038AD , 12N60 , VS6412ASL , VS6614GS , VS6640AC , VS6808DH , VS6880AT , VS7N65AD , VS7N65AF , VS8068AD .

History: CTM08N50 | AP09N90W | 2N5518 | APT20M20B2LLG | UTT30P06L-TA3-T | P1070ATFS

Keywords - VS6412AE MOSFET datasheet

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