All MOSFET. VS6808DH Datasheet

 

VS6808DH Datasheet and Replacement


   Type Designator: VS6808DH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
   Package: SOT23-6L
 

 VS6808DH substitution

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VS6808DH Datasheet (PDF)

 ..1. Size:649K  cn vanguard
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VS6808DH

VS6808DH 20V/6A Common-Drain Dual N-Channel Advanced Power MOSFET Features V DS 20 V R DS(on),TYP@ VGS=4.5 V 18 m Dual N-Channel2.5V Logic Level Control R DS(on),TYP@ VGS=2.5 V 25 m Low on-resistance RDS(on) @ VGS=2.5 V I D 6 A Fast Switching ESD Protection HBM 2.5KV SOT23-6L High Effective Pb-free lead plating; RoHS compliant; Haloge

Datasheet: VS6016HS-A , VS6018AS , VS6018BS , VS6038AD , VS6412AE , VS6412ASL , VS6614GS , VS6640AC , 5N60 , VS6880AT , VS7N65AD , VS7N65AF , VS8068AD , VS80N08AT , VS8205BH , VSB012N03MS , VSD004N03MS .

History: DMP10H400SE | NCEP6035AQU | JCS50N06VH | TSM4410CS | CMLDM7005 | STN3414 | FQD1N60TF

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