VS6808DH Specs and Replacement
Type Designator: VS6808DH
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 90 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
Package: SOT23-6L
VS6808DH substitution
- MOSFET ⓘ Cross-Reference Search
VS6808DH datasheet
vs6808dh.pdf
VS6808DH 20V/6A Common-Drain Dual N-Channel Advanced Power MOSFET Features V DS 20 V R DS(on),TYP@ VGS=4.5 V 18 m Dual N-Channel 2.5V Logic Level Control R DS(on),TYP@ VGS=2.5 V 25 m Low on-resistance RDS(on) @ VGS=2.5 V I D 6 A Fast Switching ESD Protection HBM 2.5KV SOT23-6L High Effective Pb-free lead plating; RoHS compliant; Haloge... See More ⇒
Detailed specifications: VS6016HS-A, VS6018AS, VS6018BS, VS6038AD, VS6412AE, VS6412ASL, VS6614GS, VS6640AC, IRLB4132, VS6880AT, VS7N65AD, VS7N65AF, VS8068AD, VS80N08AT, VS8205BH, VSB012N03MS, VSD004N03MS
Keywords - VS6808DH MOSFET specs
VS6808DH cross reference
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VS6808DH substitution
VS6808DH replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: KI007P | FDD9407 | 2SK3573-S | SI4953ADY-T1-E3 | IRLTS2242PBF | 2SK2402 | STW35N65DM2
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