All MOSFET. VS6808DH Datasheet

 

VS6808DH Datasheet and Replacement


   Type Designator: VS6808DH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
   Package: SOT23-6L
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VS6808DH Datasheet (PDF)

 ..1. Size:649K  cn vanguard
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VS6808DH

VS6808DH 20V/6A Common-Drain Dual N-Channel Advanced Power MOSFET Features V DS 20 V R DS(on),TYP@ VGS=4.5 V 18 m Dual N-Channel2.5V Logic Level Control R DS(on),TYP@ VGS=2.5 V 25 m Low on-resistance RDS(on) @ VGS=2.5 V I D 6 A Fast Switching ESD Protection HBM 2.5KV SOT23-6L High Effective Pb-free lead plating; RoHS compliant; Haloge

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: FQD1N60TF | STD50N03L-1 | STD4NK60Z | KNB2710A | FS10VS-6 | 1N60G-TMS4-T | DH100P70E

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