All MOSFET. VS6808DH Datasheet

 

VS6808DH MOSFET. Datasheet pdf. Equivalent


   Type Designator: VS6808DH
   Marking Code: VS05
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 8.4 nC
   trⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
   Package: SOT23-6L

 VS6808DH Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

VS6808DH Datasheet (PDF)

 ..1. Size:649K  cn vanguard
 vs6808dh.pdf

VS6808DH VS6808DH

VS6808DH 20V/6A Common-Drain Dual N-Channel Advanced Power MOSFET Features V DS 20 V R DS(on),TYP@ VGS=4.5 V 18 m Dual N-Channel2.5V Logic Level Control R DS(on),TYP@ VGS=2.5 V 25 m Low on-resistance RDS(on) @ VGS=2.5 V I D 6 A Fast Switching ESD Protection HBM 2.5KV SOT23-6L High Effective Pb-free lead plating; RoHS compliant; Haloge

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History: RSR025P03

 

 
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